Analysis of growth velocity of SiC growth by the physical vapor transport method

Koichi Kakimoto, Bing Gao, Takuya Shiramomo, Satoshi Nakano, Shin Ichi Nishizawa

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Crystal growth velocity of SiC in a process of physical vapor transport was studied on the basis of numerical calculation including the effect of compressibility, convection and buoyancy effects, flow coupling between argon gas and species of Si, Si 2C and SiC 2, and the Stefan effect. Calculation in a 2D configuration was performed to clarify the effect of pressure on growth velocity. The results revealed that convection plays a role in the measured values that growers interpret as growth velocity based on a diffusion process of argon gas and species of Si, Si 2C and SiC 2.

Original languageEnglish
Title of host publicationSilicon Carbide and Related Materials 2011, ICSCRM 2011
Pages25-28
Number of pages4
DOIs
Publication statusPublished - May 28 2012
Externally publishedYes
Event14th International Conference on Silicon Carbide and Related Materials 2011, ICSCRM 2011 - Cleveland, OH, United States
Duration: Sep 11 2011Sep 16 2011

Publication series

NameMaterials Science Forum
Volume717-720
ISSN (Print)0255-5476

Other

Other14th International Conference on Silicon Carbide and Related Materials 2011, ICSCRM 2011
CountryUnited States
CityCleveland, OH
Period9/11/119/16/11

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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  • Cite this

    Kakimoto, K., Gao, B., Shiramomo, T., Nakano, S., & Nishizawa, S. I. (2012). Analysis of growth velocity of SiC growth by the physical vapor transport method. In Silicon Carbide and Related Materials 2011, ICSCRM 2011 (pp. 25-28). (Materials Science Forum; Vol. 717-720). https://doi.org/10.4028/www.scientific.net/MSF.717-720.25