Analysis of high mobility oxide thin-film transistors after a low temperature annealing process

Juan Paolo Bermundo; Yasuaki Ishikawa; Mami N. Fujii; Chaiyanan Kulchaisit; Hiroshi Ikenoue; Yukiharu Uraoka

Analysis of high mobility oxide thin-film transistors after a low temperature annealing process

Juan Paolo Bermundo, Yasuaki Ishikawa, Mami N. Fujii, Chaiyanan Kulchaisit, Hiroshi Ikenoue, Yukiharu Uraoka

Faculty of Information Science and Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

High mobilities of more than 40 cm²/Vs in amorphous InGaZnO (a-IGZO) thin-film transistors (TFT) were achieved through a low temperature excimer laser annealing process (ELA). The improvement mechanism was determined by analyzing the changes in electrical characteristics, composition, structure, and chemical bonding of the oxide semiconductor.

Original language	English
Title of host publication	23rd International Display Workshops in conjunction with Asia Display, IDW/AD 2016
Publisher	Society for Information Display
Pages	76-77
Number of pages	2
Volume	1
ISBN (Electronic)	9781510845510
Publication status	Published - Jan 1 2016
Event	23rd International Display Workshops in conjunction with Asia Display, IDW/AD 2016 - Fukuoka, Japan Duration: Dec 7 2016 → Dec 9 2016

Other

Other	23rd International Display Workshops in conjunction with Asia Display, IDW/AD 2016
Country/Territory	Japan
City	Fukuoka
Period	12/7/16 → 12/9/16

All Science Journal Classification (ASJC) codes

Hardware and Architecture
Human-Computer Interaction
Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Cite this

Analysis of high mobility oxide thin-film transistors after a low temperature annealing process. / Bermundo, Juan Paolo; Ishikawa, Yasuaki; Fujii, Mami N. et al.
23rd International Display Workshops in conjunction with Asia Display, IDW/AD 2016. Vol. 1 Society for Information Display, 2016. p. 76-77.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Bermundo, JP, Ishikawa, Y, Fujii, MN, Kulchaisit, C, Ikenoue, H & Uraoka, Y 2016, Analysis of high mobility oxide thin-film transistors after a low temperature annealing process. in 23rd International Display Workshops in conjunction with Asia Display, IDW/AD 2016. vol. 1, Society for Information Display, pp. 76-77, 23rd International Display Workshops in conjunction with Asia Display, IDW/AD 2016, Fukuoka, Japan, 12/7/16.

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AU - Bermundo, Juan Paolo

AU - Ishikawa, Yasuaki

AU - Fujii, Mami N.

AU - Kulchaisit, Chaiyanan

AU - Ikenoue, Hiroshi

AU - Uraoka, Yukiharu

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N2 - High mobilities of more than 40 cm2/Vs in amorphous InGaZnO (a-IGZO) thin-film transistors (TFT) were achieved through a low temperature excimer laser annealing process (ELA). The improvement mechanism was determined by analyzing the changes in electrical characteristics, composition, structure, and chemical bonding of the oxide semiconductor.

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AN - SCOPUS:85050646229

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BT - 23rd International Display Workshops in conjunction with Asia Display, IDW/AD 2016

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T2 - 23rd International Display Workshops in conjunction with Asia Display, IDW/AD 2016

Y2 - 7 December 2016 through 9 December 2016

ER -

Analysis of high mobility oxide thin-film transistors after a low temperature annealing process

Abstract

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All Science Journal Classification (ASJC) codes

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