Analysis of high mobility oxide thin-film transistors after a low temperature annealing process

Juan Paolo Bermundo, Yasuaki Ishikawa, Mami N. Fujii, Chaiyanan Kulchaisit, Hiroshi Ikenoue, Yukiharu Uraoka

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

High mobilities of more than 40 cm2/Vs in amorphous InGaZnO (a-IGZO) thin-film transistors (TFT) were achieved through a low temperature excimer laser annealing process (ELA). The improvement mechanism was determined by analyzing the changes in electrical characteristics, composition, structure, and chemical bonding of the oxide semiconductor.

Original languageEnglish
Title of host publication23rd International Display Workshops in conjunction with Asia Display, IDW/AD 2016
PublisherSociety for Information Display
Pages839-840
Number of pages2
Volume2
ISBN (Electronic)9781510845510
Publication statusPublished - Jan 1 2016
Event23rd International Display Workshops in conjunction with Asia Display, IDW/AD 2016 - Fukuoka, Japan
Duration: Dec 7 2016Dec 9 2016

Other

Other23rd International Display Workshops in conjunction with Asia Display, IDW/AD 2016
CountryJapan
CityFukuoka
Period12/7/1612/9/16

All Science Journal Classification (ASJC) codes

  • Hardware and Architecture
  • Human-Computer Interaction
  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Analysis of high mobility oxide thin-film transistors after a low temperature annealing process'. Together they form a unique fingerprint.

Cite this