Analysis of inhomogeneous dislocation distribution in multicrystalline Si

J. Chen, R. R. Prakash, J. Y. Li, K. Jiptner, Y. Miyamura, H. Harada, A. Ogura, T. Sekiguchi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Grain boundaries and dislocations are major crystallographic defects in multicrystalline Si for solar cells. Heavily dislocated grains are detrimental to the photovoltaic performance. This paper attempts to clarify the origin of inhomogeneous defect distribution in multicrystalline Si. The impacts of crystal orientation and grain boundary were investigated. The crystal orientation gives an important geometrical effect in the possibility of initiating slip in a grain when subjected to stress. The presence of grain boundary can also affect dislocation distribution depending on boundary character.

Original languageEnglish
Title of host publicationGettering and Defect Engineering in Semiconductor Technology XV
PublisherTrans Tech Publications Ltd
Pages77-82
Number of pages6
ISBN (Print)9783037858240
DOIs
Publication statusPublished - 2014
Externally publishedYes
Event15th Gettering and Defect Engineering in Semiconductor Technology, GADEST 2013 - Oxford, United Kingdom
Duration: Sep 22 2013Sep 27 2013

Publication series

NameSolid State Phenomena
Volume205-206
ISSN (Print)1012-0394

Other

Other15th Gettering and Defect Engineering in Semiconductor Technology, GADEST 2013
Country/TerritoryUnited Kingdom
CityOxford
Period9/22/139/27/13

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics
  • Materials Science(all)
  • Condensed Matter Physics

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