Analysis of local segregation of impurities at a silicon melt-crystal interface during crystal growth in transverse magnetic field-applied Czochralski method

Koichi Kakimoto, Lijun Liu

Research output: Contribution to journalArticlepeer-review

10 Citations (Scopus)

Abstract

We studied local segregation of impurities, including boron, phosphorus and oxygen, at an interface between the melt and crystal during crystal growth of silicon with transverse magnetic fields. A three-dimensional global model that included local segregation based on local growth rate was used in this study. It was found that the distributions of boron and phosphorus at an interface become a saw-tooth-like pattern in the case of a small crystal rotation rate, while the distribution of oxygen concentration was almost the same at different crystal rotation rates. The distributions of boron and phosphorus were determined by segregation. However, the oxygen concentration fields in the melt and the crystal are primarily influenced by the evaporation of oxygen from the melt surface and its incorporation into the melt from the crucible wall, rather than from the segregation dynamics at the melt/crystal interface.

Original languageEnglish
Pages (from-to)2313-2316
Number of pages4
JournalJournal of Crystal Growth
Volume311
Issue number8
DOIs
Publication statusPublished - Apr 1 2009

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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