Analysis of low-reflection facet film for semiconductor optical amplifiers using ablation etching

Tatsuya Takeshita; Kazutoshi Kato; Mitsuru Sugo

doi:10.1143/JJAP.45.6922

Analysis of low-reflection facet film for semiconductor optical amplifiers using ablation etching

Tatsuya Takeshita, Kazutoshi Kato, Mitsuru Sugo

Research output: Contribution to journal › Article › peer-review

Abstract

The reflectivity of a facet film for semiconductor optical amplifiers (SOAs) has been analyzed using laser ablation etching, which changes the ripple of spectrum light. We propose a method of estimating the optimum thicknesses of TiO₂ and SiO₂ layers by observing the change in reflectivity after ablation etching. We used this method to estimate the optimum thicknesses and reduce reflectivity, while bringing the thicknesses close to their optimum values. Ablation etching is a promising technique for analyzing facet reflectivity after facet coating.

Original language	English
Pages (from-to)	6922-6926
Number of pages	5
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	45
Issue number	9 A
DOIs	https://doi.org/10.1143/JJAP.45.6922
Publication status	Published - Sept 7 2006
Externally published	Yes

All Science Journal Classification (ASJC) codes

Engineering(all)
Physics and Astronomy(all)

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10.1143/JJAP.45.6922

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title = "Analysis of low-reflection facet film for semiconductor optical amplifiers using ablation etching",

abstract = "The reflectivity of a facet film for semiconductor optical amplifiers (SOAs) has been analyzed using laser ablation etching, which changes the ripple of spectrum light. We propose a method of estimating the optimum thicknesses of TiO2 and SiO2 layers by observing the change in reflectivity after ablation etching. We used this method to estimate the optimum thicknesses and reduce reflectivity, while bringing the thicknesses close to their optimum values. Ablation etching is a promising technique for analyzing facet reflectivity after facet coating.",

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year = "2006",

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doi = "10.1143/JJAP.45.6922",

language = "English",

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AU - Takeshita, Tatsuya

AU - Kato, Kazutoshi

AU - Sugo, Mitsuru

PY - 2006/9/7

Y1 - 2006/9/7

N2 - The reflectivity of a facet film for semiconductor optical amplifiers (SOAs) has been analyzed using laser ablation etching, which changes the ripple of spectrum light. We propose a method of estimating the optimum thicknesses of TiO2 and SiO2 layers by observing the change in reflectivity after ablation etching. We used this method to estimate the optimum thicknesses and reduce reflectivity, while bringing the thicknesses close to their optimum values. Ablation etching is a promising technique for analyzing facet reflectivity after facet coating.

AB - The reflectivity of a facet film for semiconductor optical amplifiers (SOAs) has been analyzed using laser ablation etching, which changes the ripple of spectrum light. We propose a method of estimating the optimum thicknesses of TiO2 and SiO2 layers by observing the change in reflectivity after ablation etching. We used this method to estimate the optimum thicknesses and reduce reflectivity, while bringing the thicknesses close to their optimum values. Ablation etching is a promising technique for analyzing facet reflectivity after facet coating.

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JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

IS - 9 A

ER -

Analysis of low-reflection facet film for semiconductor optical amplifiers using ablation etching

Abstract

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