Analysis of low-reflection facet film for semiconductor optical amplifiers using ablation etching

Tatsuya Takeshita, Kazutoshi Kato, Mitsuru Sugo

Research output: Contribution to journalArticle

Abstract

The reflectivity of a facet film for semiconductor optical amplifiers (SOAs) has been analyzed using laser ablation etching, which changes the ripple of spectrum light. We propose a method of estimating the optimum thicknesses of TiO2 and SiO2 layers by observing the change in reflectivity after ablation etching. We used this method to estimate the optimum thicknesses and reduce reflectivity, while bringing the thicknesses close to their optimum values. Ablation etching is a promising technique for analyzing facet reflectivity after facet coating.

Original languageEnglish
Pages (from-to)6922-6926
Number of pages5
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume45
Issue number9 A
DOIs
Publication statusPublished - Sep 7 2006
Externally publishedYes

Fingerprint

Semiconductor optical amplifiers
Ablation
light amplifiers
ablation
flat surfaces
Etching
etching
reflectance
Laser ablation
ripples
laser ablation
estimating
coatings
Coatings
estimates

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Analysis of low-reflection facet film for semiconductor optical amplifiers using ablation etching. / Takeshita, Tatsuya; Kato, Kazutoshi; Sugo, Mitsuru.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 45, No. 9 A, 07.09.2006, p. 6922-6926.

Research output: Contribution to journalArticle

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