Analysis of oxygen incorporation in unidirectionally solidified multicrystalline silicon for solar cells

Hitoshi Matsuo, R. Bairava Ganesh, Satoshi Nakano, Lijun Liu, Koji Arafune, Yoshio Ohshita, Masafumi Yamaguchi, Koichi Kakimoto

Research output: Contribution to journalArticle

44 Citations (Scopus)

Abstract

We studied the process of oxygen transfer from a quartz crucible to a multicrystalline silicon during unidirectional solidification process. We investigated the boundary layer thickness of oxygen concentration near a crucible wall region using Fourier transform infrared spectrometer (FTIR) measurement. The results suggest that oxygen concentration was increased near a crucible wall, and the boundary layer thickness of oxygen concentration was estimated to be 2-6 mm. The estimated value of boundary layer thickness of oxygen concentrations is similar to those estimated by analytical and numerical calculation. These results suggest that the oxygen was dissolved from a crucible wall through the liner made of Si3N4 to the melt during growth process.

Original languageEnglish
Pages (from-to)2204-2208
Number of pages5
JournalJournal of Crystal Growth
Volume310
Issue number7-9
DOIs
Publication statusPublished - Apr 2008

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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