In this study, a one-dimensional simulation code of intermediate- temperature disk type SOFC is developed. The single cell voltage-current density characteristic curves and the temperature dependence of the single cell voltage are calculated. The numerically estimated single cell voltage is about 0.02 V higher than that of the experimental result when the electronic conductivity of the electrolyte is not taken into consideration. To address this discrepancy, the electronic resistivity of 1500 Ωcm is incorporated in the simulation code. The numerically obtained single cell voltage coincides well with the experimental one in this case. The dependence of the single cell voltage on the cell temperature is also investigated. It is made clear that the single cell voltage takes the highest value when the cell temperature is about 760°C for nominal current density of 0.3 A/cm2.