Analysis of plasma for carbon nanotube growth by plasma-enhanced chemical vapor deposition

A. Ozeki; Y. Suda; A. Okita; J. Nakamura; A. Oda; Y. Sakai; H. Sugawara

doi:10.1557/proc-0901-rb24-03

Analysis of plasma for carbon nanotube growth by plasma-enhanced chemical vapor deposition

A. Ozeki, Y. Suda, A. Okita, J. Nakamura, A. Oda, Y. Sakai, H. Sugawara

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Optical emission spectra of a CH₄/H₂/Ar gas mixture plasma were observed during carbon nanotube (CNT) growth in RF plasma-enhanced chemical vapor deposition. CNTs with diameters of ∼10-30 nm and length of ∼6 (im were grown on double- and triple-layered films of catalyst/support materials (Fe_xO_y/TiO₂ and Al₂O ₃/Fe_xO_y/Al₂O₃) at the total gas pressures of 1-10 Torr with gas flow rates of CH₄ - 27 seem, H₂ = 3 seem, and Ar = 1 seem. The number density of CNTs increased with the gas pressure, and Al₂O_y/Fe _xO_y/Al₂O₃ (each thickness of 1 nm) film yielded the thinnest CNTs with a high number density among the present catalysts. The spatial distributions of H atom relative density in the plasma were obtained by actinometry. The H relative density decreased with the pressure, and this suggests the suppression of CH₃ radical generation in the plasma.

Original language	English
Title of host publication	Assembly at the Nanoscale
Subtitle of host publication	Toward Functional Nanostructured Materials
Publisher	Materials Research Society
Pages	523-528
Number of pages	6
ISBN (Print)	1558998551, 9781558998551
DOIs	https://doi.org/10.1557/proc-0901-rb24-03
Publication status	Published - 2005
Externally published	Yes
Event	2005 MRS Fall Meeting - Boston, MA, United States Duration: Nov 28 2005 → Dec 2 2005

Publication series

Name	Materials Research Society Symposium Proceedings
Volume	901
ISSN (Print)	0272-9172

Other

Other	2005 MRS Fall Meeting
Country/Territory	United States
City	Boston, MA
Period	11/28/05 → 12/2/05

All Science Journal Classification (ASJC) codes

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Access to Document

10.1557/proc-0901-rb24-03

Cite this

Ozeki, A., Suda, Y., Okita, A., Nakamura, J., Oda, A., Sakai, Y., & Sugawara, H. (2005). Analysis of plasma for carbon nanotube growth by plasma-enhanced chemical vapor deposition. In Assembly at the Nanoscale: Toward Functional Nanostructured Materials (pp. 523-528). (Materials Research Society Symposium Proceedings; Vol. 901). Materials Research Society. https://doi.org/10.1557/proc-0901-rb24-03

Analysis of plasma for carbon nanotube growth by plasma-enhanced chemical vapor deposition. / Ozeki, A.; Suda, Y.; Okita, A. et al.

Assembly at the Nanoscale: Toward Functional Nanostructured Materials. Materials Research Society, 2005. p. 523-528 (Materials Research Society Symposium Proceedings; Vol. 901).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Ozeki, A, Suda, Y, Okita, A, Nakamura, J, Oda, A, Sakai, Y & Sugawara, H 2005, Analysis of plasma for carbon nanotube growth by plasma-enhanced chemical vapor deposition. in Assembly at the Nanoscale: Toward Functional Nanostructured Materials. Materials Research Society Symposium Proceedings, vol. 901, Materials Research Society, pp. 523-528, 2005 MRS Fall Meeting, Boston, MA, United States, 11/28/05. https://doi.org/10.1557/proc-0901-rb24-03

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abstract = "Optical emission spectra of a CH4/H2/Ar gas mixture plasma were observed during carbon nanotube (CNT) growth in RF plasma-enhanced chemical vapor deposition. CNTs with diameters of ∼10-30 nm and length of ∼6 (im were grown on double- and triple-layered films of catalyst/support materials (FexOy/TiO2 and Al2O 3/FexOy/Al2O3) at the total gas pressures of 1-10 Torr with gas flow rates of CH4 - 27 seem, H2 = 3 seem, and Ar = 1 seem. The number density of CNTs increased with the gas pressure, and Al2Oy/Fe xOy/Al2O3 (each thickness of 1 nm) film yielded the thinnest CNTs with a high number density among the present catalysts. The spatial distributions of H atom relative density in the plasma were obtained by actinometry. The H relative density decreased with the pressure, and this suggests the suppression of CH3 radical generation in the plasma.",

author = "A. Ozeki and Y. Suda and A. Okita and J. Nakamura and A. Oda and Y. Sakai and H. Sugawara",

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AU - Ozeki, A.

AU - Suda, Y.

AU - Okita, A.

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AU - Oda, A.

AU - Sakai, Y.

AU - Sugawara, H.

PY - 2005

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N2 - Optical emission spectra of a CH4/H2/Ar gas mixture plasma were observed during carbon nanotube (CNT) growth in RF plasma-enhanced chemical vapor deposition. CNTs with diameters of ∼10-30 nm and length of ∼6 (im were grown on double- and triple-layered films of catalyst/support materials (FexOy/TiO2 and Al2O 3/FexOy/Al2O3) at the total gas pressures of 1-10 Torr with gas flow rates of CH4 - 27 seem, H2 = 3 seem, and Ar = 1 seem. The number density of CNTs increased with the gas pressure, and Al2Oy/Fe xOy/Al2O3 (each thickness of 1 nm) film yielded the thinnest CNTs with a high number density among the present catalysts. The spatial distributions of H atom relative density in the plasma were obtained by actinometry. The H relative density decreased with the pressure, and this suggests the suppression of CH3 radical generation in the plasma.

AB - Optical emission spectra of a CH4/H2/Ar gas mixture plasma were observed during carbon nanotube (CNT) growth in RF plasma-enhanced chemical vapor deposition. CNTs with diameters of ∼10-30 nm and length of ∼6 (im were grown on double- and triple-layered films of catalyst/support materials (FexOy/TiO2 and Al2O 3/FexOy/Al2O3) at the total gas pressures of 1-10 Torr with gas flow rates of CH4 - 27 seem, H2 = 3 seem, and Ar = 1 seem. The number density of CNTs increased with the gas pressure, and Al2Oy/Fe xOy/Al2O3 (each thickness of 1 nm) film yielded the thinnest CNTs with a high number density among the present catalysts. The spatial distributions of H atom relative density in the plasma were obtained by actinometry. The H relative density decreased with the pressure, and this suggests the suppression of CH3 radical generation in the plasma.

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Analysis of plasma for carbon nanotube growth by plasma-enhanced chemical vapor deposition

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