Analysis of temperature and impurity distributions in a unidirectional-solidification process for multi-crystalline silicon of solar cells by a global model

Koichi Kakimoto, Lijun Liu, Satoshi Nakano

Research output: Contribution to journalArticle

17 Citations (Scopus)

Abstract

The unidirectional-solidification process is a key method for large-scale production of multi-crystalline silicon for use in highly efficient solar cells in the photovoltaic industry. Since the efficiency of solar cells depends on the crystal quality of the multi-crystalline silicon, it is necessary to optimize the unidirectional-solidification process to control temperature and impurity distributions in a silicon ingot. We developed a transient global model for the unidirectional-solidification process. We carried out calculations to investigate the temperature and impurity distributions in a silicon ingot during solidification. Conductive heat transfer and radiative heat exchange in a unidirectional-solidification furnace and convective heat transfer in the melt in a crucible are coupled to each other. These heat exchanges were solved iteratively by a finite volume method in a transient condition. Time-dependent distributions of impurity and temperature in a silicon ingot during the unidirectional-solidification process were numerically investigated.

Original languageEnglish
Pages (from-to)269-272
Number of pages4
JournalMaterials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume134
Issue number2-3 SPEC. ISS.
DOIs
Publication statusPublished - Oct 15 2006

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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