Analysis on the photovoltaic property of Si quantum dot-sensitized solar cells

Hyunwoong Seo, Daiki Ichida, Giichiro Uchida, Kunihiro Kamataki, Naho Itagaki, Kazunori Koga, Masaharu Shiratani

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

This work first introduced Si quantum dots (QDs) for QD-sensitized solar cells (QDSCs). However, the particle size of Si QDs, which had visible light absorption, was relatively large. The paint-type Si QDSC was proposed in this work because Si QDs could not penetrate into nano-porous TiO2 network. Si QDs were synthesized by multi-hollow plasma discharge CVD and mixed with TiO2 paste. For better performance, thickness of Si-TiO2 layer was varied by coating times and Si-TiO2 films were optically and electrically analyzed. As a result, 6 times screen printed Si-TiO2 film had the best performance with the smallest internal impedance and the highest photon to current efficiency.

Original languageEnglish
Pages (from-to)339-343
Number of pages5
JournalInternational Journal of Precision Engineering and Manufacturing
Volume15
Issue number2
DOIs
Publication statusPublished - Feb 1 2014

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Semiconductor quantum dots
Solar cells
Paint
Light absorption
Chemical vapor deposition
Photons
Particle size
Plasmas
Coatings

All Science Journal Classification (ASJC) codes

  • Mechanical Engineering
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

Cite this

Analysis on the photovoltaic property of Si quantum dot-sensitized solar cells. / Seo, Hyunwoong; Ichida, Daiki; Uchida, Giichiro; Kamataki, Kunihiro; Itagaki, Naho; Koga, Kazunori; Shiratani, Masaharu.

In: International Journal of Precision Engineering and Manufacturing, Vol. 15, No. 2, 01.02.2014, p. 339-343.

Research output: Contribution to journalArticle

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