Analytical Formulation of SiO2-IL scavenging in HfO2/SiO2/Si gate stacks - A key is the SiO2/Si interface reaction

Xiuyan Li, Takeaki Yajima, Tomonori Nishimura, Kosuke Nagashio, Akira Toriumi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The scavenging kinetics of ultra-thin-SiO2 interface layer (IL) in HfO2/SiO2/Si stacks is investigated by focusing on SiO2/Si interface reaction in addition to both O and Si atom kinetics. SiO2/Si interface serves as a stage that the oxygen vacancy (VO) is converted to Si release from SiO2 with the help of Si substrate. Based on both diffusion kinetics and possible reaction, an analytical model for two-stage SiO2-IL scavenging in high-k gate stack is proposed.

Original languageEnglish
Title of host publication2014 IEEE International Electron Devices Meeting, IEDM 2014
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages21.2.1-21.2.4
EditionFebruary
ISBN (Electronic)9781479980017
DOIs
Publication statusPublished - Feb 20 2015
Externally publishedYes
Event2014 60th IEEE International Electron Devices Meeting, IEDM 2014 - San Francisco, United States
Duration: Dec 15 2014Dec 17 2014

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
NumberFebruary
Volume2015-February
ISSN (Print)0163-1918

Conference

Conference2014 60th IEEE International Electron Devices Meeting, IEDM 2014
Country/TerritoryUnited States
CitySan Francisco
Period12/15/1412/17/14

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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