We studied the tunnel transport between the edge of a Pfaffian fractional quantum Hall state and that of an integer quantum Hall state. Based on the duality argument between the strong and weak tunnelings, we found that an Andreev-like reflection appeared in the strong tunneling regime. We calculated the charge conductance in the weak and strong tunneling regimes for the low-voltage limit. In the weak tunneling limit, dI=dV was proportional to V1=ν with bias voltage V and ν = 1=2. By contrast, in the strong tunneling limit, dI=dV was expressed by (e2=h)2ν=(1 + ν) with a correction term. We expect that this condition can be realized experimentally at the point contact between a fractional quantum Hall state with ν = 5=2 and an integer quantum Hall state with ν = 3.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)