Anisotropic deposition of copper by H-assisted plasma chemical vapor deposition

Kosuke Takenaka, Masaharu Shiratani, Masao Onishi, Manabu Takeshita, Toshio Kinoshita, Kazunori Koga, Yukio Watanabe

Research output: Contribution to journalArticlepeer-review

10 Citations (Scopus)


In order to fill small via-holes and trenches for ultralarge scale integration (ULSI) interconnects, we propose an anisotropic chemical vapor deposition (CVD) method by which Cu is deposited at a high rate at the bottom of a trench compared to that at its side wall. The ion irradiation is the key to realize the anisotropic CVD. The anisotropy, which is a ratio of deposition rate at the bottom of a trench to that at its side wall, tends to increase with energy as well as flux of ions (H3+ is the predominant ion) impinging on the substrate surface, while it does not depend on H flux. We demonstrate promising anisotropic filling of trenches by the anisotropic CVD method.

Original languageEnglish
Pages (from-to)301-304
Number of pages4
JournalMaterials Science in Semiconductor Processing
Issue number2-3
Publication statusPublished - Apr 2002

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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