Anisotropic deposition of Cu in trenches by H-assisted plasma chemical vapor deposition

The anisotropic deposition of Cu in trenches by H-assisted plasma chemical vapor deposition (HAPCVD) was discussed. In the HAPCVD reactor the main discharge as well as an additional discharge for H atom source were sustained. It was found that narrower the width of trench, faster was the deposition rate on its bottom. The deposition in the trench stopped automatically after filling completely. It was observed that the deposition had a potential to overcome the problems associated with conformal filling such as small crystal grain size below half of the trench width and formation of a seam with residual impurities of high concentrations.