Anisotropic deposition of Cu in trenches by H-assisted plasma chemical vapor deposition

Kosuke Takenaka, Makoto Kita, Toshio Kinoshita, Kazunori Koga, Masaharu Shiratani, Yukio Watanabe

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

The anisotropic deposition of Cu in trenches by H-assisted plasma chemical vapor deposition (HAPCVD) was discussed. In the HAPCVD reactor the main discharge as well as an additional discharge for H atom source were sustained. It was found that narrower the width of trench, faster was the deposition rate on its bottom. The deposition in the trench stopped automatically after filling completely. It was observed that the deposition had a potential to overcome the problems associated with conformal filling such as small crystal grain size below half of the trench width and formation of a seam with residual impurities of high concentrations.

Original languageEnglish
Pages (from-to)1903-1907
Number of pages5
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume22
Issue number4
DOIs
Publication statusPublished - Jul 1 2004

Fingerprint

Chemical vapor deposition
vapor deposition
Plasmas
Deposition rates
Impurities
Atoms
Crystals
grain size
reactors
impurities
crystals
atoms

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

Cite this

Anisotropic deposition of Cu in trenches by H-assisted plasma chemical vapor deposition. / Takenaka, Kosuke; Kita, Makoto; Kinoshita, Toshio; Koga, Kazunori; Shiratani, Masaharu; Watanabe, Yukio.

In: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, Vol. 22, No. 4, 01.07.2004, p. 1903-1907.

Research output: Contribution to journalArticle

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AU - Watanabe, Yukio

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