Anisotropic electrical properties in bismuth layer structured dielectrics with natural super lattice structure

Takashi Kojima, Junichi Kimura, Muneyasu Suzuki, Kenji Takahashi, Takahiro Oikawa, Yukio Sakashita, Kazumi Kato, Takayuki Watanabe, Tadashi Takenaka, Tomoaki Yamada, Hiroshi Funakubo

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Dielectric property of epitaxial SrBi 4Ti 4O 15 thin films with (001)-, (1110)-, (105)/(015)-, and (100)/(010)-orientations was investigated as a function of film thickness. As the tilting angle of c-axis from the surface normal is smaller, the relative dielectric constant begins to degrade at thinner thickness; eventually, the (001)-oriented films for which the c-axis is vertical to the substrate do not show noticeable degradation. The leakage current density also strongly depends of the tilting angle of the c-axis. The results indicate that the layer structure of SrBi 4Ti 4O 15 exhibits a small size effect with high insulation performance.

Original languageEnglish
Article number012907
JournalApplied Physics Letters
Volume101
Issue number1
DOIs
Publication statusPublished - Jul 2 2012
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'Anisotropic electrical properties in bismuth layer structured dielectrics with natural super lattice structure'. Together they form a unique fingerprint.

Cite this