Anisotropic plasma chemical vapor deposition of copper films in trenches

Kosuke Takenaka, Masao Onishi, Manabu Takenshita, Toshio Kinoshita, Kazunori Koga, Masaharu Shiratani, Yukio Watanabe

Research output: Contribution to journalConference article

1 Citation (Scopus)

Abstract

An ion-assisted chemical vapor deposition method by which Cu is deposited preferentially from the bottom of trenches (anisotropic CVD) has been proposed in order to fill small via holes and trenches. By using Ar + H2 + C2H5OH[Cu(hfac)2] discharges with a ratio H2 / (H2 + Ar) = 83%, Cu is filled preferentially from the bottom of trenches without deposition on the sidewall and top surfaces. The deposition rate on the bottom surface of trenches is experimentally found to increase with decreasing its width.

Original languageEnglish
Pages (from-to)465-470
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume766
Publication statusPublished - Dec 1 2003
EventMaterials, Technology and Reliability for Advanced Interconnects and Low-k Dielectrics - 2003 - San Francisco, CA, United States
Duration: Apr 21 2003Apr 25 2003

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trench
Copper
Chemical vapor deposition
copper
Plasmas
plasma
Deposition rates
Ions
chemical
ion

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Anisotropic plasma chemical vapor deposition of copper films in trenches. / Takenaka, Kosuke; Onishi, Masao; Takenshita, Manabu; Kinoshita, Toshio; Koga, Kazunori; Shiratani, Masaharu; Watanabe, Yukio.

In: Materials Research Society Symposium - Proceedings, Vol. 766, 01.12.2003, p. 465-470.

Research output: Contribution to journalConference article

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AU - Takenshita, Manabu

AU - Kinoshita, Toshio

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AU - Shiratani, Masaharu

AU - Watanabe, Yukio

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AB - An ion-assisted chemical vapor deposition method by which Cu is deposited preferentially from the bottom of trenches (anisotropic CVD) has been proposed in order to fill small via holes and trenches. By using Ar + H2 + C2H5OH[Cu(hfac)2] discharges with a ratio H2 / (H2 + Ar) = 83%, Cu is filled preferentially from the bottom of trenches without deposition on the sidewall and top surfaces. The deposition rate on the bottom surface of trenches is experimentally found to increase with decreasing its width.

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