Anisotropic transport in graphene on SiC substrate with periodic nanofacets

S. Odaka, H. Miyazaki, S. L. Li, A. Kanda, K. Morita, S. Tanaka, Y. Miyata, H. Kataura, K. Tsukagoshi, Y. Aoyagi

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Abstract

Anisotropic transport in graphene field-effect transistors fabricated on a vicinal SiC substrate with a self-organized periodic nanofacet structure is investigated. Graphene thermally grown on a vicinal substrate contains two following regions: atomically flat terraces and nanofacets (atomically stepped slopes). The graphene film at a nanofacet is continuously connected between two neighboring terrace films. Anisotropic transport properties are clearly observed, indicating a difference in the graphene properties of the two regions. The observed anisotropic properties are discussed in terms of the effects of nanofacet structures on conductivity and electron mobility.

Original languageEnglish
Article number062111
JournalApplied Physics Letters
Volume96
Issue number6
DOIs
Publication statusPublished - 2010

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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    Odaka, S., Miyazaki, H., Li, S. L., Kanda, A., Morita, K., Tanaka, S., Miyata, Y., Kataura, H., Tsukagoshi, K., & Aoyagi, Y. (2010). Anisotropic transport in graphene on SiC substrate with periodic nanofacets. Applied Physics Letters, 96(6), [062111]. https://doi.org/10.1063/1.3309701