The deep levels in GaTe single crystal have been investigated by deep-level transient spectroscopy measurements. The hole-trapping level is detected at 0.8 eV above the valence band. It is found that the deep level is associated with the defect or defect complex and the concentration increases with increasing annealing temperature.
|Number of pages||2|
|Journal||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|Issue number||6 A|
|Publication status||Published - Jun 1998|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)