Annealing of supersaturated cobalt in silicon

Hideo Suwaki, Kouji Hashimoto, Hiroshi Nakashima, Kimio Hashimoto

    Research output: Contribution to journalComment/debatepeer-review

    9 Citations (Scopus)

    Abstract

    The annealing of supersaturated cobalt in silicon was investigated by measuring the in-depth profiles of the cobalt concentration as a function of the annealing time at 1100°C. In-depth profiles of the annealing process could be represented by a complementary error function, and the diffusion coefficient is consistent with that of the in-diffusion process.

    Original languageEnglish
    Pages (from-to)1952-1953
    Number of pages2
    JournalJapanese Journal of Applied Physics
    Volume25
    Issue number12 R
    DOIs
    Publication statusPublished - Dec 1986

    All Science Journal Classification (ASJC) codes

    • Engineering(all)
    • Physics and Astronomy(all)

    Fingerprint Dive into the research topics of 'Annealing of supersaturated cobalt in silicon'. Together they form a unique fingerprint.

    Cite this