Annealing of supersaturated cobalt in silicon

Hideo Suwaki, Kouji Hashimoto, Hiroshi Nakashima, Kimio Hashimoto

    Research output: Contribution to journal › Comment/debate

    9 Citations (Scopus)

    Abstract

    The annealing of supersaturated cobalt in silicon was investigated by measuring the in-depth profiles of the cobalt concentration as a function of the annealing time at 1100°C. In-depth profiles of the annealing process could be represented by a complementary error function, and the diffusion coefficient is consistent with that of the in-diffusion process.

    Original languageEnglish
    Pages (from-to)1952-1953
    Number of pages2
    JournalJapanese Journal of Applied Physics
    Volume25
    Issue number12 R
    DOIs
    Publication statusPublished - Dec 1986

    Fingerprint

    Cobalt
    cobalt
    Annealing
    Silicon
    annealing
    silicon
    error functions
    profiles
    diffusion coefficient

    All Science Journal Classification (ASJC) codes

    • Engineering(all)
    • Physics and Astronomy(all)

    Cite this

    Annealing of supersaturated cobalt in silicon. / Suwaki, Hideo; Hashimoto, Kouji; Nakashima, Hiroshi; Hashimoto, Kimio.

    In: Japanese Journal of Applied Physics, Vol. 25, No. 12 R, 12.1986, p. 1952-1953.

    Research output: Contribution to journal › Comment/debate

    Suwaki, H, Hashimoto, K, Nakashima, H & Hashimoto, K 1986, 'Annealing of supersaturated cobalt in silicon', Japanese Journal of Applied Physics, vol. 25, no. 12 R, pp. 1952-1953. https://doi.org/10.1143/JJAP.25.1952
    Suwaki H, Hashimoto K, Nakashima H, Hashimoto K. Annealing of supersaturated cobalt in silicon. Japanese Journal of Applied Physics. 1986 Dec;25(12 R):1952-1953. https://doi.org/10.1143/JJAP.25.1952
    Suwaki, Hideo ; Hashimoto, Kouji ; Nakashima, Hiroshi ; Hashimoto, Kimio. / Annealing of supersaturated cobalt in silicon. In: Japanese Journal of Applied Physics. 1986 ; Vol. 25, No. 12 R. pp. 1952-1953.
    @article{841d1077228b47ec89b590bc9f58d75e,
    title = "Annealing of supersaturated cobalt in silicon",
    abstract = "The annealing of supersaturated cobalt in silicon was investigated by measuring the in-depth profiles of the cobalt concentration as a function of the annealing time at 1100°C. In-depth profiles of the annealing process could be represented by a complementary error function, and the diffusion coefficient is consistent with that of the in-diffusion process.",
    author = "Hideo Suwaki and Kouji Hashimoto and Hiroshi Nakashima and Kimio Hashimoto",
    year = "1986",
    month = "12",
    doi = "10.1143/JJAP.25.1952",
    language = "English",
    volume = "25",
    pages = "1952--1953",
    journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
    issn = "0021-4922",
    publisher = "Institute of Physics",
    number = "12 R",

    }

    TY - JOUR

    T1 - Annealing of supersaturated cobalt in silicon

    AU - Suwaki, Hideo

    AU - Hashimoto, Kouji

    AU - Nakashima, Hiroshi

    AU - Hashimoto, Kimio

    PY - 1986/12

    Y1 - 1986/12

    N2 - The annealing of supersaturated cobalt in silicon was investigated by measuring the in-depth profiles of the cobalt concentration as a function of the annealing time at 1100°C. In-depth profiles of the annealing process could be represented by a complementary error function, and the diffusion coefficient is consistent with that of the in-diffusion process.

    AB - The annealing of supersaturated cobalt in silicon was investigated by measuring the in-depth profiles of the cobalt concentration as a function of the annealing time at 1100°C. In-depth profiles of the annealing process could be represented by a complementary error function, and the diffusion coefficient is consistent with that of the in-diffusion process.

    UR - http://www.scopus.com/inward/record.url?scp=0022956529&partnerID=8YFLogxK

    UR - http://www.scopus.com/inward/citedby.url?scp=0022956529&partnerID=8YFLogxK

    U2 - 10.1143/JJAP.25.1952

    DO - 10.1143/JJAP.25.1952

    M3 - Comment/debate

    AN - SCOPUS:0022956529

    VL - 25

    SP - 1952

    EP - 1953

    JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

    JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

    SN - 0021-4922

    IS - 12 R

    ER -

    Access to Document