TY - JOUR
T1 - Annealing of supersaturated cobalt in silicon
AU - Suwaki, Hideo
AU - Hashimoto, Kouji
AU - Nakashima, Hiroshi
AU - Hashimoto, Kimio
PY - 1986/12
Y1 - 1986/12
N2 - The annealing of supersaturated cobalt in silicon was investigated by measuring the in-depth profiles of the cobalt concentration as a function of the annealing time at 1100°C. In-depth profiles of the annealing process could be represented by a complementary error function, and the diffusion coefficient is consistent with that of the in-diffusion process.
AB - The annealing of supersaturated cobalt in silicon was investigated by measuring the in-depth profiles of the cobalt concentration as a function of the annealing time at 1100°C. In-depth profiles of the annealing process could be represented by a complementary error function, and the diffusion coefficient is consistent with that of the in-diffusion process.
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U2 - 10.1143/JJAP.25.1952
DO - 10.1143/JJAP.25.1952
M3 - Comment/debate
AN - SCOPUS:0022956529
VL - 25
SP - 1952
EP - 1953
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 12 R
ER -