Annealing of supersaturated cobalt in silicon

Hideo Suwaki; Kouji Hashimoto; Hiroshi Nakashima; Kimio Hashimoto

doi:10.1143/JJAP.25.1952

Annealing of supersaturated cobalt in silicon

Hideo Suwaki, Kouji Hashimoto, Hiroshi Nakashima, Kimio Hashimoto

Research output: Contribution to journal › Comment/debate › peer-review

9 Citations (Scopus)

Abstract

The annealing of supersaturated cobalt in silicon was investigated by measuring the in-depth profiles of the cobalt concentration as a function of the annealing time at 1100°C. In-depth profiles of the annealing process could be represented by a complementary error function, and the diffusion coefficient is consistent with that of the in-diffusion process.

Original language	English
Pages (from-to)	1952-1953
Number of pages	2
Journal	Japanese Journal of Applied Physics
Volume	25
Issue number	12 R
DOIs	https://doi.org/10.1143/JJAP.25.1952
Publication status	Published - Dec 1986

All Science Journal Classification (ASJC) codes

Engineering(all)
Physics and Astronomy(all)

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title = "Annealing of supersaturated cobalt in silicon",

abstract = "The annealing of supersaturated cobalt in silicon was investigated by measuring the in-depth profiles of the cobalt concentration as a function of the annealing time at 1100°C. In-depth profiles of the annealing process could be represented by a complementary error function, and the diffusion coefficient is consistent with that of the in-diffusion process.",

author = "Hideo Suwaki and Kouji Hashimoto and Hiroshi Nakashima and Kimio Hashimoto",

year = "1986",

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doi = "10.1143/JJAP.25.1952",

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AU - Suwaki, Hideo

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AU - Nakashima, Hiroshi

AU - Hashimoto, Kimio

PY - 1986/12

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N2 - The annealing of supersaturated cobalt in silicon was investigated by measuring the in-depth profiles of the cobalt concentration as a function of the annealing time at 1100°C. In-depth profiles of the annealing process could be represented by a complementary error function, and the diffusion coefficient is consistent with that of the in-diffusion process.

AB - The annealing of supersaturated cobalt in silicon was investigated by measuring the in-depth profiles of the cobalt concentration as a function of the annealing time at 1100°C. In-depth profiles of the annealing process could be represented by a complementary error function, and the diffusion coefficient is consistent with that of the in-diffusion process.

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DO - 10.1143/JJAP.25.1952

M3 - Comment/debate

AN - SCOPUS:0022956529

VL - 25

SP - 1952

EP - 1953

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

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