Annealing of supersaturated cobalt in silicon

Hideo Suwaki, Kouji Hashimoto, Hiroshi Nakashima, Kimio Hashimoto

    Research output: Contribution to journal › Comment/debate

    9 Citations (Scopus)

    Abstract

    The annealing of supersaturated cobalt in silicon was investigated by measuring the in-depth profiles of the cobalt concentration as a function of the annealing time at 1100°C. In-depth profiles of the annealing process could be represented by a complementary error function, and the diffusion coefficient is consistent with that of the in-diffusion process.

    Original languageEnglish
    Pages (from-to)1952-1953
    Number of pages2
    JournalJapanese Journal of Applied Physics
    Volume25
    Issue number12 R
    DOIs
    Publication statusPublished - 1986

    Fingerprint

    Cobalt
    cobalt
    Annealing
    Silicon
    annealing
    silicon
    error functions
    profiles
    diffusion coefficient

    All Science Journal Classification (ASJC) codes

    • Engineering(all)
    • Physics and Astronomy(all)

    Cite this

    Annealing of supersaturated cobalt in silicon. / Suwaki, Hideo; Hashimoto, Kouji; Nakashima, Hiroshi; Hashimoto, Kimio.

    In: Japanese Journal of Applied Physics, Vol. 25, No. 12 R, 1986, p. 1952-1953.

    Research output: Contribution to journal › Comment/debate

    Suwaki, H, Hashimoto, K, Nakashima, H & Hashimoto, K 1986, 'Annealing of supersaturated cobalt in silicon', Japanese Journal of Applied Physics, vol. 25, no. 12 R, pp. 1952-1953. https://doi.org/10.1143/JJAP.25.1952
    Suwaki H, Hashimoto K, Nakashima H, Hashimoto K. Annealing of supersaturated cobalt in silicon. Japanese Journal of Applied Physics. 1986;25(12 R):1952-1953. https://doi.org/10.1143/JJAP.25.1952
    Suwaki, Hideo ; Hashimoto, Kouji ; Nakashima, Hiroshi ; Hashimoto, Kimio. / Annealing of supersaturated cobalt in silicon. In: Japanese Journal of Applied Physics. 1986 ; Vol. 25, No. 12 R. pp. 1952-1953.
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    AU - Nakashima, Hiroshi

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