Annularly grooved diaphragm pressure sensor with embedded silicon nanowires for low pressure application

Songsong Zhang, Tao Wang, Liang Lou, Wei Mong Tsang, Renshi Sawada, Dim Lee Kwong, Chengkuo Lee

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

We present a nanoelectromechanical system piezoresistive pressure sensor with annular grooves on the circular diaphragm where silicon nanowires (SiNWs) are embedded as sensing elements around the edge. In comparison with our previous flat diaphragm pressure sensor, this new diaphragm structure enhances the device sensitivity by 2.5 times under pressure range of 0-120 mmHg. By leveraging SiNWs as piezoresistors, this improvement is even remarkable in contrast to other recently reported piezoresistive pressure sensing devices. In addition, with the miniaturized sensing diaphragm (radius of 100 μ), the sensor can be potentially used as implantable device for low-pressure sensing applications.

Original languageEnglish
Article number6786986
Pages (from-to)1396-1407
Number of pages12
JournalJournal of Microelectromechanical Systems
Volume23
Issue number6
DOIs
Publication statusPublished - Dec 1 2014

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Pressure sensors
Diaphragms
Nanowires
Silicon
NEMS
Sensors

All Science Journal Classification (ASJC) codes

  • Mechanical Engineering
  • Electrical and Electronic Engineering

Cite this

Annularly grooved diaphragm pressure sensor with embedded silicon nanowires for low pressure application. / Zhang, Songsong; Wang, Tao; Lou, Liang; Tsang, Wei Mong; Sawada, Renshi; Kwong, Dim Lee; Lee, Chengkuo.

In: Journal of Microelectromechanical Systems, Vol. 23, No. 6, 6786986, 01.12.2014, p. 1396-1407.

Research output: Contribution to journalArticle

Zhang, Songsong ; Wang, Tao ; Lou, Liang ; Tsang, Wei Mong ; Sawada, Renshi ; Kwong, Dim Lee ; Lee, Chengkuo. / Annularly grooved diaphragm pressure sensor with embedded silicon nanowires for low pressure application. In: Journal of Microelectromechanical Systems. 2014 ; Vol. 23, No. 6. pp. 1396-1407.
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