Annularly grooved diaphragm pressure sensor with embedded silicon nanowires for low pressure application

Songsong Zhang, Tao Wang, Liang Lou, Wei Mong Tsang, Renshi Sawada, Dim Lee Kwong, Chengkuo Lee

    Research output: Contribution to journalArticlepeer-review

    22 Citations (Scopus)

    Abstract

    We present a nanoelectromechanical system piezoresistive pressure sensor with annular grooves on the circular diaphragm where silicon nanowires (SiNWs) are embedded as sensing elements around the edge. In comparison with our previous flat diaphragm pressure sensor, this new diaphragm structure enhances the device sensitivity by 2.5 times under pressure range of 0-120 mmHg. By leveraging SiNWs as piezoresistors, this improvement is even remarkable in contrast to other recently reported piezoresistive pressure sensing devices. In addition, with the miniaturized sensing diaphragm (radius of 100 μ), the sensor can be potentially used as implantable device for low-pressure sensing applications.

    Original languageEnglish
    Article number6786986
    Pages (from-to)1396-1407
    Number of pages12
    JournalJournal of Microelectromechanical Systems
    Volume23
    Issue number6
    DOIs
    Publication statusPublished - Dec 1 2014

    All Science Journal Classification (ASJC) codes

    • Mechanical Engineering
    • Electrical and Electronic Engineering

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