Anomalous and highly efficient InAs nanowire phototransistors based on majority carrier transport at room temperature

Nan Guo; Weida Hu; Lei Liao; Sen Po Yip; Johnny C. Ho; Jinshui Miao; Zhi Zhang; Jin Zou; Tao Jiang; Shiwei Wu; Xiaoshuang Chen; Wei Lu

doi:10.1002/adma.201403664

Anomalous and highly efficient InAs nanowire phototransistors based on majority carrier transport at room temperature

Nan Guo, Weida Hu, Lei Liao, Sen Po Yip, Johnny C. Ho, Jinshui Miao, Zhi Zhang, Jin Zou, Tao Jiang, Shiwei Wu, Xiaoshuang Chen, Wei Lu

Research output: Contribution to journal › Article › peer-review

146 Citations (Scopus)

Abstract

(Graph Presented).Core/shell-like n-type InAs nanowire phototransistors based on majority-carrier-dominated photodetection are investigated. Under optical illumination, electrons generated from the core are excited into the self-assembled near-surface photogating layer, forming a builtin electric field to significantly regulate the core conductance. Anomalous high photoconductive gain and fast response time are obtained at room temperature.

Original language	English
Pages (from-to)	8203-8209
Number of pages	7
Journal	Advanced Materials
Volume	26
Issue number	48
DOIs	https://doi.org/10.1002/adma.201403664
Publication status	Published - Dec 2014
Externally published	Yes

All Science Journal Classification (ASJC) codes

Materials Science(all)
Mechanics of Materials
Mechanical Engineering

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10.1002/adma.201403664

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Anomalous and highly efficient InAs nanowire phototransistors based on majority carrier transport at room temperature. / Guo, Nan; Hu, Weida; Liao, Lei; Yip, Sen Po ; Ho, Johnny C.; Miao, Jinshui; Zhang, Zhi; Zou, Jin; Jiang, Tao; Wu, Shiwei; Chen, Xiaoshuang; Lu, Wei.

In: Advanced Materials, Vol. 26, No. 48, 12.2014, p. 8203-8209.

Research output: Contribution to journal › Article › peer-review

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abstract = "(Graph Presented).Core/shell-like n-type InAs nanowire phototransistors based on majority-carrier-dominated photodetection are investigated. Under optical illumination, electrons generated from the core are excited into the self-assembled near-surface photogating layer, forming a builtin electric field to significantly regulate the core conductance. Anomalous high photoconductive gain and fast response time are obtained at room temperature.",

author = "Nan Guo and Weida Hu and Lei Liao and Yip, {Sen Po} and Ho, {Johnny C.} and Jinshui Miao and Zhi Zhang and Jin Zou and Tao Jiang and Shiwei Wu and Xiaoshuang Chen and Wei Lu",

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AU - Guo, Nan

AU - Hu, Weida

AU - Liao, Lei

AU - Yip, Sen Po

AU - Ho, Johnny C.

AU - Miao, Jinshui

AU - Zhang, Zhi

AU - Zou, Jin

AU - Jiang, Tao

AU - Wu, Shiwei

AU - Chen, Xiaoshuang

AU - Lu, Wei

PY - 2014/12

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N2 - (Graph Presented).Core/shell-like n-type InAs nanowire phototransistors based on majority-carrier-dominated photodetection are investigated. Under optical illumination, electrons generated from the core are excited into the self-assembled near-surface photogating layer, forming a builtin electric field to significantly regulate the core conductance. Anomalous high photoconductive gain and fast response time are obtained at room temperature.

AB - (Graph Presented).Core/shell-like n-type InAs nanowire phototransistors based on majority-carrier-dominated photodetection are investigated. Under optical illumination, electrons generated from the core are excited into the self-assembled near-surface photogating layer, forming a builtin electric field to significantly regulate the core conductance. Anomalous high photoconductive gain and fast response time are obtained at room temperature.

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Anomalous and highly efficient InAs nanowire phototransistors based on majority carrier transport at room temperature

Abstract

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