Abstract
(Graph Presented).Core/shell-like n-type InAs nanowire phototransistors based on majority-carrier-dominated photodetection are investigated. Under optical illumination, electrons generated from the core are excited into the self-assembled near-surface photogating layer, forming a builtin electric field to significantly regulate the core conductance. Anomalous high photoconductive gain and fast response time are obtained at room temperature.
Original language | English |
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Pages (from-to) | 8203-8209 |
Number of pages | 7 |
Journal | Advanced Materials |
Volume | 26 |
Issue number | 48 |
DOIs | |
Publication status | Published - Dec 2014 |
Externally published | Yes |
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Mechanics of Materials
- Mechanical Engineering