(Graph Presented).Core/shell-like n-type InAs nanowire phototransistors based on majority-carrier-dominated photodetection are investigated. Under optical illumination, electrons generated from the core are excited into the self-assembled near-surface photogating layer, forming a builtin electric field to significantly regulate the core conductance. Anomalous high photoconductive gain and fast response time are obtained at room temperature.
|Number of pages||7|
|Publication status||Published - Dec 2014|
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Mechanics of Materials
- Mechanical Engineering