Anomalous and highly efficient InAs nanowire phototransistors based on majority carrier transport at room temperature

Nan Guo, Weida Hu, Lei Liao, Sen Po Yip, Johnny C. Ho, Jinshui Miao, Zhi Zhang, Jin Zou, Tao Jiang, Shiwei Wu, Xiaoshuang Chen, Wei Lu

Research output: Contribution to journalArticlepeer-review

123 Citations (Scopus)

Abstract

(Graph Presented).Core/shell-like n-type InAs nanowire phototransistors based on majority-carrier-dominated photodetection are investigated. Under optical illumination, electrons generated from the core are excited into the self-assembled near-surface photogating layer, forming a builtin electric field to significantly regulate the core conductance. Anomalous high photoconductive gain and fast response time are obtained at room temperature.

Original languageEnglish
Pages (from-to)8203-8209
Number of pages7
JournalAdvanced Materials
Volume26
Issue number48
DOIs
Publication statusPublished - Dec 2014
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

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