We worked out the excess energies for bulk InxGa1-xN and InxGa1-xN thin films on GaN and InN in order to investigate their thermodynamic stabilities. It has been found that the excess energy maximum shifted toward x to approximately 0.80 for InGaN/GaN and x to approximately 0.10 for InGaN/InN due to the lattice constraint in contrast with x to approximately 0.50 for bulk. Moreover, it has been revealed that the excess energy for InGaN/GaN is larger than that for bulk at x>0.65. This suggests that In-rich films are less stable on GaN than bulk state. These results indicate that the lattice constraint has a significant influence on thermodynamic stabilities of thin films.
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Inorganic Chemistry
- Materials Chemistry