TY - JOUR
T1 - Anomalous behaviour of silicon single-crystals observed by x-ray diffraction
AU - Kohno, Atsushi
AU - Aomine, Nobutaka
AU - Soejima, Yuji
AU - Okazaki, Atsushi
PY - 1994/9
Y1 - 1994/9
N2 - Silicon crystals have been examined at low temperatures by high-angle double-crystal X-ray diffractometry (HADOX). By a new experimental procedure named 2θ-resolved HADOX, the change in the lattice spacing and that in the crystal orientation are independently determined. Diffraction for a region without or with stresses has been examined on specimen crystals in a special form. It is found that the silicon crystal shows normal behaviour on both cooling and heating when it is stress free. With stresses, anomalies are found around 210 K on cooling.
AB - Silicon crystals have been examined at low temperatures by high-angle double-crystal X-ray diffractometry (HADOX). By a new experimental procedure named 2θ-resolved HADOX, the change in the lattice spacing and that in the crystal orientation are independently determined. Diffraction for a region without or with stresses has been examined on specimen crystals in a special form. It is found that the silicon crystal shows normal behaviour on both cooling and heating when it is stress free. With stresses, anomalies are found around 210 K on cooling.
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U2 - 10.1143/JJAP.33.5073
DO - 10.1143/JJAP.33.5073
M3 - Article
AN - SCOPUS:0028513206
VL - 33
SP - 5073
EP - 5077
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 9 R
ER -