Anomalous behaviour of silicon single-crystals observed by x-ray diffraction

Atsushi Kohno, Nobutaka Aomine, Yuji Soejima, Atsushi Okazaki

Research output: Contribution to journalArticlepeer-review

9 Citations (Scopus)


Silicon crystals have been examined at low temperatures by high-angle double-crystal X-ray diffractometry (HADOX). By a new experimental procedure named 2θ-resolved HADOX, the change in the lattice spacing and that in the crystal orientation are independently determined. Diffraction for a region without or with stresses has been examined on specimen crystals in a special form. It is found that the silicon crystal shows normal behaviour on both cooling and heating when it is stress free. With stresses, anomalies are found around 210 K on cooling.

Original languageEnglish
Pages (from-to)5073-5077
Number of pages5
JournalJapanese Journal of Applied Physics
Issue number9 R
Publication statusPublished - Sep 1994

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)


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