Anomalous behaviour of silicon single-crystals observed by x-ray diffraction

Atsushi Kohno; Nobutaka Aomine; Yuji Soejima; Atsushi Okazaki

doi:10.1143/JJAP.33.5073

Anomalous behaviour of silicon single-crystals observed by x-ray diffraction

Atsushi Kohno, Nobutaka Aomine, Yuji Soejima, Atsushi Okazaki

Division for Theoretical Natural Science

Research output: Contribution to journal › Article

9 Citations (Scopus)

Abstract

Silicon crystals have been examined at low temperatures by high-angle double-crystal X-ray diffractometry (HADOX). By a new experimental procedure named 2θ-resolved HADOX, the change in the lattice spacing and that in the crystal orientation are independently determined. Diffraction for a region without or with stresses has been examined on specimen crystals in a special form. It is found that the silicon crystal shows normal behaviour on both cooling and heating when it is stress free. With stresses, anomalies are found around 210 K on cooling.

Original language	English
Pages (from-to)	5073-5077
Number of pages	5
Journal	Japanese Journal of Applied Physics
Volume	33
Issue number	9 R
DOIs	https://doi.org/10.1143/JJAP.33.5073
Publication status	Published - Sep 1994

All Science Journal Classification (ASJC) codes

Engineering(all)
Physics and Astronomy(all)

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abstract = "Silicon crystals have been examined at low temperatures by high-angle double-crystal X-ray diffractometry (HADOX). By a new experimental procedure named 2θ-resolved HADOX, the change in the lattice spacing and that in the crystal orientation are independently determined. Diffraction for a region without or with stresses has been examined on specimen crystals in a special form. It is found that the silicon crystal shows normal behaviour on both cooling and heating when it is stress free. With stresses, anomalies are found around 210 K on cooling.",

author = "Atsushi Kohno and Nobutaka Aomine and Yuji Soejima and Atsushi Okazaki",

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AU - Soejima, Yuji

AU - Okazaki, Atsushi

PY - 1994/9

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AB - Silicon crystals have been examined at low temperatures by high-angle double-crystal X-ray diffractometry (HADOX). By a new experimental procedure named 2θ-resolved HADOX, the change in the lattice spacing and that in the crystal orientation are independently determined. Diffraction for a region without or with stresses has been examined on specimen crystals in a special form. It is found that the silicon crystal shows normal behaviour on both cooling and heating when it is stress free. With stresses, anomalies are found around 210 K on cooling.

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