Anomalous leakage current in silicon oxynitride thin films grown by microwave excited nitrogen plasma nitridation

Rohana Perera, Akihiro Ikeda, Reiji Hattori, Yukinori Kuroki

Research output: Contribution to conferencePaper

2 Citations (Scopus)

Abstract

Silicon oxynitride (SiON) has emerged as a better gate dielectric material to replace ultra-thin gate SiO2 in scaled down metal-oxide-semiconductor (MOS) devices. The present study investigates the leakage current in SiON grown by a plasma-based process. Thin films of SiON (6nm) were grown on Si substrates by nitriding rapid thermally grown SiO2 layers in a low-energy, microwave excited nitrogen plasma and by subsequent re-oxidation; and the resulting films were characterized in Al/SiON/p-Si MOS structures under atmospheric, vacuum and low temperature conditions. The analysis of the current-voltage (I-V) characteristics obtained under atmospheric conditions shows an enhanced leakage current in the pre-Fowler-Nordheim region of 4∼8MV/cm oxide field range. However, I-V characterization in vacuum showed the complete removal of this additional current component. This current was found to be not due to a charging/capacitive effect. It is speculated that this additional mid-oxide-field leakage current could possibly be due to a conducting pathway given rise to by interaction of atmospheric gases/water molecules with the plasma induced defects on the oxynitride film.

Original languageEnglish
Pages1084-1087
Number of pages4
Publication statusPublished - Oct 20 2003
EventProceedings of the 7th International Conference on Properties and Applications of Dielectric Materials - Nagoya, Japan
Duration: Jun 1 2003Jun 5 2003

Other

OtherProceedings of the 7th International Conference on Properties and Applications of Dielectric Materials
CountryJapan
CityNagoya
Period6/1/036/5/03

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Materials Chemistry

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  • Cite this

    Perera, R., Ikeda, A., Hattori, R., & Kuroki, Y. (2003). Anomalous leakage current in silicon oxynitride thin films grown by microwave excited nitrogen plasma nitridation. 1084-1087. Paper presented at Proceedings of the 7th International Conference on Properties and Applications of Dielectric Materials, Nagoya, Japan.