Anomalous Spectral Shape Evolution of Ge Raman Shift in Oxidation of SiGe

Y. Noma, W. Song, T. Nishimura, T. Yajima, A. Toriumi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This paper reports anomalous Raman peak shape of Ge in SiGe oxidation. The results in Raman spectroscopy in SiGe suggest that Ge precipitation occurs at the SiGe interface associated with the oxidation. Non-oxidized Ge remaining at the interface should be related to the interface degradation which should lead to poor gate stack properties. Finally, it discusses how to achieve well-behaved SiGe gate stacks by considering anomalous Raman spectrum in the oxidation.

Original languageEnglish
Title of host publication2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages199-201
Number of pages3
ISBN (Print)9781538637111
DOIs
Publication statusPublished - Jul 26 2018
Externally publishedYes
Event2nd IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Kobe, Japan
Duration: Mar 13 2018Mar 16 2018

Publication series

Name2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings

Other

Other2nd IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018
CountryJapan
CityKobe
Period3/13/183/16/18

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Industrial and Manufacturing Engineering
  • Electronic, Optical and Magnetic Materials

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