Anomalous Spectral Shape Evolution of Ge Raman Shift in Oxidation of SiGe

Y. Noma; W. Song; T. Nishimura; T. Yajima; A. Toriumi

doi:10.1109/EDTM.2018.8421461

Anomalous Spectral Shape Evolution of Ge Raman Shift in Oxidation of SiGe

Y. Noma, W. Song, T. Nishimura, T. Yajima, A. Toriumi

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

This paper reports anomalous Raman peak shape of Ge in SiGe oxidation. The results in Raman spectroscopy in SiGe suggest that Ge precipitation occurs at the SiGe interface associated with the oxidation. Non-oxidized Ge remaining at the interface should be related to the interface degradation which should lead to poor gate stack properties. Finally, it discusses how to achieve well-behaved SiGe gate stacks by considering anomalous Raman spectrum in the oxidation.

Original language	English
Title of host publication	2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	199-201
Number of pages	3
ISBN (Print)	9781538637111
DOIs	https://doi.org/10.1109/EDTM.2018.8421461
Publication status	Published - Jul 26 2018
Externally published	Yes
Event	2nd IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Kobe, Japan Duration: Mar 13 2018 → Mar 16 2018

Publication series

Name	2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings

Other

Other	2nd IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018
Country/Territory	Japan
City	Kobe
Period	3/13/18 → 3/16/18

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering
Industrial and Manufacturing Engineering
Electronic, Optical and Magnetic Materials

Access to Document

10.1109/EDTM.2018.8421461

Cite this

Noma, Y., Song, W., Nishimura, T., Yajima, T., & Toriumi, A. (2018). Anomalous Spectral Shape Evolution of Ge Raman Shift in Oxidation of SiGe. In 2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings (pp. 199-201). [8421461] (2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EDTM.2018.8421461

Anomalous Spectral Shape Evolution of Ge Raman Shift in Oxidation of SiGe. / Noma, Y.; Song, W.; Nishimura, T. et al.
2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2018. p. 199-201 8421461 (2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Noma, Y, Song, W, Nishimura, T, Yajima, T & Toriumi, A 2018, Anomalous Spectral Shape Evolution of Ge Raman Shift in Oxidation of SiGe. in 2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings., 8421461, 2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings, Institute of Electrical and Electronics Engineers Inc., pp. 199-201, 2nd IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018, Kobe, Japan, 3/13/18. https://doi.org/10.1109/EDTM.2018.8421461

Noma Y, Song W, Nishimura T, Yajima T, Toriumi A. Anomalous Spectral Shape Evolution of Ge Raman Shift in Oxidation of SiGe. In 2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2018. p. 199-201. 8421461. (2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings). doi: 10.1109/EDTM.2018.8421461

Noma, Y. ; Song, W. ; Nishimura, T. et al. / Anomalous Spectral Shape Evolution of Ge Raman Shift in Oxidation of SiGe. 2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2018. pp. 199-201 (2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings).

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title = "Anomalous Spectral Shape Evolution of Ge Raman Shift in Oxidation of SiGe",

abstract = "This paper reports anomalous Raman peak shape of Ge in SiGe oxidation. The results in Raman spectroscopy in SiGe suggest that Ge precipitation occurs at the SiGe interface associated with the oxidation. Non-oxidized Ge remaining at the interface should be related to the interface degradation which should lead to poor gate stack properties. Finally, it discusses how to achieve well-behaved SiGe gate stacks by considering anomalous Raman spectrum in the oxidation.",

author = "Y. Noma and W. Song and T. Nishimura and T. Yajima and A. Toriumi",

note = "Funding Information: This work was partly supported Grant-in-Aid for Scientific Research (A). Publisher Copyright: {\textcopyright} 2018 IEEE. Copyright: Copyright 2018 Elsevier B.V., All rights reserved.; 2nd IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 ; Conference date: 13-03-2018 Through 16-03-2018",

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Anomalous Spectral Shape Evolution of Ge Raman Shift in Oxidation of SiGe

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