Abstract
A new approach toward epitaxial growth of group III nitrides using an `anti-surfactant' is presented. Two unique phenomena, quantum dot formation and dislocation termination, were recognized using this approach. The presence of Si atoms as an anti-surfactant on (Al)GaN surfaces modified the nitride epitaxial growth kinetics. These phenomena appeared to be independent; however, the growth mechanisms indicated a common surface event, which included the formation of a monolayer thick Si-N mask (nano-mask) within the fractional coverage on the surface. The SiN nano-mask influenced the morphology of the deposited GaN surface, i.e. quantum structures, and also contributed to the termination of threading dislocations in GaN films.
Original language | English |
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Pages (from-to) | L831-L834 |
Journal | Japanese Journal of Applied Physics, Part 2: Letters |
Volume | 39 |
Issue number | 8 B |
DOIs | |
Publication status | Published - Aug 15 2000 |
Externally published | Yes |
All Science Journal Classification (ASJC) codes
- Engineering(all)
- Physics and Astronomy (miscellaneous)
- Physics and Astronomy(all)