Applicability of the three-dimensional Alexander-Haasen model for the analysis of dislocation distributions in single-crystal silicon

B. Gao, K. Jiptner, S. Nakano, H. Harada, Y. Miyamura, T. Sekiguchi, K. Kakimoto

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

Applicability of the three-dimensional Alexander-Haasen (AH) model for the analysis of dislocation distributions in single-crystal silicon has been estimated. The numerical results obtained from the AH model agree well with the experimental data for both CZ-Si and FZ-Si crystals with the axis in the [001] direction but do not completely agree with the experimental data for the FZ-Si crystal with the axis in the [111] direction. The inapplicability of the AH model in a crystal with the axis in the [111] direction may arise from the neglect of dislocation propagation in this model, because the dislocation propagation in a crystal with the axis in the [111] direction is more active than that in a crystal with the axis in the [001] direction. Therefore, to increase the applicability of the AH model, it is necessary to include the effect of dislocation propagation.

Original languageEnglish
Pages (from-to)49-55
Number of pages7
JournalJournal of Crystal Growth
Volume411
DOIs
Publication statusPublished - Feb 1 2015

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Fingerprint Dive into the research topics of 'Applicability of the three-dimensional Alexander-Haasen model for the analysis of dislocation distributions in single-crystal silicon'. Together they form a unique fingerprint.

  • Cite this