Application of 2DHG Diamond p-FET in Cascode with Normally-OFF Operation and a Breakdown Voltage of over 1.7 kV

Te Bi, Junxiong Niu, Nobutaka Oi, Masafumi Inaba, Toshio Sasaki, Hiroshi Kawarada

Research output: Contribution to journalArticlepeer-review

Abstract

Hydrogen-terminated (C-H) diamond has a high current density owing to the 2-D hole gas (2DHG) on its C-H diamond surface. The C-H diamond metal-oxide-semiconductor field-effect transistor (MOSFET) has high-breakdown-voltage characteristics but exhibits normally-ON operation. For security and energy-saving purposes, we fabricated the diamond cascode using the C-H diamond p-channel field-effect transistor (p-FET) combination with the normally- OFF silicon p-FET. The diamond cascode exhibits normally- OFF characteristics and a high breakdown voltage of more than 1.7-kV.

Original languageEnglish
Article number9189858
Pages (from-to)4006-4009
Number of pages4
JournalIEEE Transactions on Electron Devices
Volume67
Issue number10
DOIs
Publication statusPublished - Oct 2020

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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