Application of dielectric isolation technology based on soot bonding

Renshi Sawada, H. Nakada

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

A soot bonding method has been developed that solves the economic and limited-diameter problems associated with the conventional dielectrically isolated substrate. In this method, the Si-B-O soot particles used as adhesive agents are generated by essentially the same flame-hydrolysis technology used for fabricating optical waveguides. This soot bonding method is effective even for joining a surface with deep V-grooves or trenches, as well as for rough poly-Si-deposited surfaces. The ability to bond substrates with any joining surface conditions is expected to lead to wide application of this process and to a reduction of the steps, resulting in cost reduction.

Original languageEnglish
Title of host publicationProc 3 Int Symp Power Semicond Devices ICs ISPSD 91
EditorsAyman M. Shibib, Jayant B. Baliga
PublisherPubl by IEEE
Pages203-208
Number of pages6
ISBN (Print)0780300092
Publication statusPublished - 1991
Externally publishedYes
EventProceedings of the 3rd International Symposium on Power Semiconductor Devices and ICs - ISPSD '91 - Baltimore, MD, USA
Duration: Apr 22 1991Apr 24 1991

Other

OtherProceedings of the 3rd International Symposium on Power Semiconductor Devices and ICs - ISPSD '91
CityBaltimore, MD, USA
Period4/22/914/24/91

Fingerprint

Soot
Joining
Optical waveguides
Substrates
Cost reduction
Polysilicon
Hydrolysis
Adhesives
Economics

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Sawada, R., & Nakada, H. (1991). Application of dielectric isolation technology based on soot bonding. In A. M. Shibib, & J. B. Baliga (Eds.), Proc 3 Int Symp Power Semicond Devices ICs ISPSD 91 (pp. 203-208). Publ by IEEE.

Application of dielectric isolation technology based on soot bonding. / Sawada, Renshi; Nakada, H.

Proc 3 Int Symp Power Semicond Devices ICs ISPSD 91. ed. / Ayman M. Shibib; Jayant B. Baliga. Publ by IEEE, 1991. p. 203-208.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Sawada, R & Nakada, H 1991, Application of dielectric isolation technology based on soot bonding. in AM Shibib & JB Baliga (eds), Proc 3 Int Symp Power Semicond Devices ICs ISPSD 91. Publ by IEEE, pp. 203-208, Proceedings of the 3rd International Symposium on Power Semiconductor Devices and ICs - ISPSD '91, Baltimore, MD, USA, 4/22/91.
Sawada R, Nakada H. Application of dielectric isolation technology based on soot bonding. In Shibib AM, Baliga JB, editors, Proc 3 Int Symp Power Semicond Devices ICs ISPSD 91. Publ by IEEE. 1991. p. 203-208
Sawada, Renshi ; Nakada, H. / Application of dielectric isolation technology based on soot bonding. Proc 3 Int Symp Power Semicond Devices ICs ISPSD 91. editor / Ayman M. Shibib ; Jayant B. Baliga. Publ by IEEE, 1991. pp. 203-208
@inproceedings{a6bb66488ae14443bf4727dabf017cc0,
title = "Application of dielectric isolation technology based on soot bonding",
abstract = "A soot bonding method has been developed that solves the economic and limited-diameter problems associated with the conventional dielectrically isolated substrate. In this method, the Si-B-O soot particles used as adhesive agents are generated by essentially the same flame-hydrolysis technology used for fabricating optical waveguides. This soot bonding method is effective even for joining a surface with deep V-grooves or trenches, as well as for rough poly-Si-deposited surfaces. The ability to bond substrates with any joining surface conditions is expected to lead to wide application of this process and to a reduction of the steps, resulting in cost reduction.",
author = "Renshi Sawada and H. Nakada",
year = "1991",
language = "English",
isbn = "0780300092",
pages = "203--208",
editor = "Shibib, {Ayman M.} and Baliga, {Jayant B.}",
booktitle = "Proc 3 Int Symp Power Semicond Devices ICs ISPSD 91",
publisher = "Publ by IEEE",

}

TY - GEN

T1 - Application of dielectric isolation technology based on soot bonding

AU - Sawada, Renshi

AU - Nakada, H.

PY - 1991

Y1 - 1991

N2 - A soot bonding method has been developed that solves the economic and limited-diameter problems associated with the conventional dielectrically isolated substrate. In this method, the Si-B-O soot particles used as adhesive agents are generated by essentially the same flame-hydrolysis technology used for fabricating optical waveguides. This soot bonding method is effective even for joining a surface with deep V-grooves or trenches, as well as for rough poly-Si-deposited surfaces. The ability to bond substrates with any joining surface conditions is expected to lead to wide application of this process and to a reduction of the steps, resulting in cost reduction.

AB - A soot bonding method has been developed that solves the economic and limited-diameter problems associated with the conventional dielectrically isolated substrate. In this method, the Si-B-O soot particles used as adhesive agents are generated by essentially the same flame-hydrolysis technology used for fabricating optical waveguides. This soot bonding method is effective even for joining a surface with deep V-grooves or trenches, as well as for rough poly-Si-deposited surfaces. The ability to bond substrates with any joining surface conditions is expected to lead to wide application of this process and to a reduction of the steps, resulting in cost reduction.

UR - http://www.scopus.com/inward/record.url?scp=0026368527&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0026368527&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0026368527

SN - 0780300092

SP - 203

EP - 208

BT - Proc 3 Int Symp Power Semicond Devices ICs ISPSD 91

A2 - Shibib, Ayman M.

A2 - Baliga, Jayant B.

PB - Publ by IEEE

ER -