Application of laser-induced ghz surface acoustic waves to evaluate ion-implanted semiconductors

Hiroyuki Nishimura, Akira Harata, Tsuguo Sawada

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)

Abstract

The transient reflecting grating method has been used to characterize ion-implanted silicon layers and demonstrate its usefulness for nondestructive and remote evaluation of modified solid surfaces. The surface acoustic velocity, relaxation constant and signal intensity were measured as functions of ion dose. The results suggested that damage induced by implantation significantly affected the surface properties even under light dose conditions. The subnanosecond temporal resolution of the present method provided successful characterization of the implanted layers.

Original languageEnglish
Pages (from-to)91-93
Number of pages3
JournalJapanese Journal of Applied Physics
Volume31
DOIs
Publication statusPublished - Jan 1992
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Fingerprint

Dive into the research topics of 'Application of laser-induced ghz surface acoustic waves to evaluate ion-implanted semiconductors'. Together they form a unique fingerprint.

Cite this