TY - JOUR
T1 - Application of laser-induced ghz surface acoustic waves to evaluate ion-implanted semiconductors
AU - Nishimura, Hiroyuki
AU - Harata, Akira
AU - Sawada, Tsuguo
PY - 1992/1
Y1 - 1992/1
N2 - The transient reflecting grating method has been used to characterize ion-implanted silicon layers and demonstrate its usefulness for nondestructive and remote evaluation of modified solid surfaces. The surface acoustic velocity, relaxation constant and signal intensity were measured as functions of ion dose. The results suggested that damage induced by implantation significantly affected the surface properties even under light dose conditions. The subnanosecond temporal resolution of the present method provided successful characterization of the implanted layers.
AB - The transient reflecting grating method has been used to characterize ion-implanted silicon layers and demonstrate its usefulness for nondestructive and remote evaluation of modified solid surfaces. The surface acoustic velocity, relaxation constant and signal intensity were measured as functions of ion dose. The results suggested that damage induced by implantation significantly affected the surface properties even under light dose conditions. The subnanosecond temporal resolution of the present method provided successful characterization of the implanted layers.
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U2 - 10.7567/JJAPS.31S1.91
DO - 10.7567/JJAPS.31S1.91
M3 - Article
AN - SCOPUS:84957268991
VL - 31
SP - 91
EP - 93
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
ER -