Application of microwave plasma gate oxidation to strained-Si/SiGe-on- insulator

Mika Nishisaka, Tanemasa Asano

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

We have applied microwave-plasma oxidation at 400°C to the gate oxide formation of a strained-Si/SiGe-on-insulator (SGOI) metal-oxide-semiconductor field-effect transistor (MOSFET). Application of low-temperature wet-O 2 treatment to plasma oxide on strained-Si/Si0.85Ge 0.15 significantly reduces the density of interface states and provides a 72% enhancement in transconductance compared with Si control devices. In the case of a thermally oxidized device, the junction leakage current was increased due to Ge condensation up to 50% Ge at the mesa island edge. On the other hand, the plasma oxide device showed a leakage current two orders of magnitude lower than that of the thermally oxidized device, owing to the suppression of the Ge condensation.

Original languageEnglish
Pages (from-to)2914-2918
Number of pages5
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume45
Issue number4 B
DOIs
Publication statusPublished - Apr 25 2006

Fingerprint

Microwaves
insulators
Plasmas
microwaves
Leakage currents
Oxidation
oxidation
Oxides
oxides
Condensation
leakage
condensation
control equipment
Interface states
Transconductance
mesas
MOSFET devices
transconductance
metal oxide semiconductors
field effect transistors

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Application of microwave plasma gate oxidation to strained-Si/SiGe-on- insulator. / Nishisaka, Mika; Asano, Tanemasa.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 45, No. 4 B, 25.04.2006, p. 2914-2918.

Research output: Contribution to journalArticle

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