Application of one-bond-type migration to interstitialcy-type self-interstitial and phosphorus in silicon

Masayuki Yoshida, Yoichi Kamiura, Reiji Tsuruno, Manabu Takahashi, Hajime Tomokage

Research output: Contribution to journalConference article

Abstract

(1) From the standpoint of the potential energy, the one-bond-type migration is divided into the BC (bond-centered type) and SP (split 〈1 0 0〉 type) migrations. In the BC migration, there are two kinds of atom migrations. One is that in which a BC atom pushes its neighboring atom to a BC site. This is the typical migration by the interstitialcy mechanism. The other is that in which a BC atom rotates about its neighboring atom and becomes the BC atom again. This is a feature of the BC migration. (2) The BC and SP migrations are applied to P diffusion in Si. Assuming there is no interaction between P and Si, the distance and probability for each step of the migration are obtained and applied to Si self-diffusion. Because they are not constant, the definition of the correlation factor for the self-diffusion is different from the usual one.

Original languageEnglish
Pages (from-to)128-131
Number of pages4
JournalJournal of Crystal Growth
Volume210
Issue number1
DOIs
Publication statusPublished - Mar 1 2000
Event8th International Conference on Defects-Recognition, Imaging and Physics in Semiconductors - Narita, Jpn
Duration: Sep 15 1999Sep 18 1999

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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