Application of one-bond-type migration to interstitialcy-type self-interstitial and phosphorus in silicon

Masayuki Yoshida, Yoichi Kamiura, Reiji Tsuruno, Manabu Takahashi, Hajime Tomokage

Research output: Contribution to journalConference article

Abstract

(1) From the standpoint of the potential energy, the one-bond-type migration is divided into the BC (bond-centered type) and SP (split 〈1 0 0〉 type) migrations. In the BC migration, there are two kinds of atom migrations. One is that in which a BC atom pushes its neighboring atom to a BC site. This is the typical migration by the interstitialcy mechanism. The other is that in which a BC atom rotates about its neighboring atom and becomes the BC atom again. This is a feature of the BC migration. (2) The BC and SP migrations are applied to P diffusion in Si. Assuming there is no interaction between P and Si, the distance and probability for each step of the migration are obtained and applied to Si self-diffusion. Because they are not constant, the definition of the correlation factor for the self-diffusion is different from the usual one.

Original languageEnglish
Pages (from-to)128-131
Number of pages4
JournalJournal of Crystal Growth
Volume210
Issue number1
DOIs
Publication statusPublished - Mar 1 2000
Event8th International Conference on Defects-Recognition, Imaging and Physics in Semiconductors - Narita, Jpn
Duration: Sep 15 1999Sep 18 1999

Fingerprint

Silicon
Phosphorus
phosphorus
interstitials
Atoms
silicon
atoms
Potential energy
potential energy

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Cite this

Application of one-bond-type migration to interstitialcy-type self-interstitial and phosphorus in silicon. / Yoshida, Masayuki; Kamiura, Yoichi; Tsuruno, Reiji; Takahashi, Manabu; Tomokage, Hajime.

In: Journal of Crystal Growth, Vol. 210, No. 1, 01.03.2000, p. 128-131.

Research output: Contribution to journalConference article

Yoshida, Masayuki ; Kamiura, Yoichi ; Tsuruno, Reiji ; Takahashi, Manabu ; Tomokage, Hajime. / Application of one-bond-type migration to interstitialcy-type self-interstitial and phosphorus in silicon. In: Journal of Crystal Growth. 2000 ; Vol. 210, No. 1. pp. 128-131.
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AU - Tomokage, Hajime

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