Applications of nanosecond laser annealing to fabricating p-n homo junction on ZnO nanorods

T. Shimogaki, T. Ofuji, N. Tetsuyama, K. Okazaki, M. Higashihata, D. Nakamura, H. Ikenoue, T. Asano, T. Okada

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Zinc oxide (ZnO) has attracted considerable attension due to its wide applications in particular ultra violet light emitting diode (UV-LED). In addition, the one-dimensional ZnO crystals are quite attractive as building blocks for light emitting devices like laser and LED, because of their high crystallinity and light confinement properties. However, a method for the realization of the stable p-type ZnO has not been well established. In our study, we have investigated the effect of the nanosecond laser irradiation to the ZnO nanorods as an ultrafast melting and recrystallizing process for realization of the p-type ZnO. Fabrication of the p-n homo junction along ZnO nanorods has been demonstrated using phosphorus ion implantation and ns-laser annealing by a KrF excimer laser. Rectifying I-V characteristics attributed to p-n junction were observed from the measurement of electrical properties. In addition, the penetration depth of laser annealed layer was measured by observing cathode luminescence images. Then, it was turned out that high repetition rate laser annealing can anneal ZnO nanorods over the optical-absorption length. In this report, optical, structural, and electrical characteristics of the phosphorus ion-implanted ZnO nanorods annealed by the KrF excimer laser are discussed.

Original languageEnglish
Title of host publicationOxide-Based Materials and Devices IV
DOIs
Publication statusPublished - May 30 2013
EventOxide-Based Materials and Devices IV - San Francisco, CA, United States
Duration: Feb 3 2013Feb 6 2013

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume8626
ISSN (Print)0277-786X

Other

OtherOxide-Based Materials and Devices IV
CountryUnited States
CitySan Francisco, CA
Period2/3/132/6/13

Fingerprint

Zinc Oxide
Nanorods
laser annealing
Zinc oxide
p-n junctions
Annealing
zinc oxides
nanorods
Laser
Lasers
Excimer Laser
Phosphorus
Excimer lasers
excimer lasers
Light emitting diodes
phosphorus
light emitting diodes
lasers
Ion Implantation
Optical Absorption

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

Cite this

Shimogaki, T., Ofuji, T., Tetsuyama, N., Okazaki, K., Higashihata, M., Nakamura, D., ... Okada, T. (2013). Applications of nanosecond laser annealing to fabricating p-n homo junction on ZnO nanorods. In Oxide-Based Materials and Devices IV [86260V] (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 8626). https://doi.org/10.1117/12.2003856

Applications of nanosecond laser annealing to fabricating p-n homo junction on ZnO nanorods. / Shimogaki, T.; Ofuji, T.; Tetsuyama, N.; Okazaki, K.; Higashihata, M.; Nakamura, D.; Ikenoue, H.; Asano, T.; Okada, T.

Oxide-Based Materials and Devices IV. 2013. 86260V (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 8626).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Shimogaki, T, Ofuji, T, Tetsuyama, N, Okazaki, K, Higashihata, M, Nakamura, D, Ikenoue, H, Asano, T & Okada, T 2013, Applications of nanosecond laser annealing to fabricating p-n homo junction on ZnO nanorods. in Oxide-Based Materials and Devices IV., 86260V, Proceedings of SPIE - The International Society for Optical Engineering, vol. 8626, Oxide-Based Materials and Devices IV, San Francisco, CA, United States, 2/3/13. https://doi.org/10.1117/12.2003856
Shimogaki T, Ofuji T, Tetsuyama N, Okazaki K, Higashihata M, Nakamura D et al. Applications of nanosecond laser annealing to fabricating p-n homo junction on ZnO nanorods. In Oxide-Based Materials and Devices IV. 2013. 86260V. (Proceedings of SPIE - The International Society for Optical Engineering). https://doi.org/10.1117/12.2003856
Shimogaki, T. ; Ofuji, T. ; Tetsuyama, N. ; Okazaki, K. ; Higashihata, M. ; Nakamura, D. ; Ikenoue, H. ; Asano, T. ; Okada, T. / Applications of nanosecond laser annealing to fabricating p-n homo junction on ZnO nanorods. Oxide-Based Materials and Devices IV. 2013. (Proceedings of SPIE - The International Society for Optical Engineering).
@inproceedings{e11c85ca9d6240c1952ff32f835c91ae,
title = "Applications of nanosecond laser annealing to fabricating p-n homo junction on ZnO nanorods",
abstract = "Zinc oxide (ZnO) has attracted considerable attension due to its wide applications in particular ultra violet light emitting diode (UV-LED). In addition, the one-dimensional ZnO crystals are quite attractive as building blocks for light emitting devices like laser and LED, because of their high crystallinity and light confinement properties. However, a method for the realization of the stable p-type ZnO has not been well established. In our study, we have investigated the effect of the nanosecond laser irradiation to the ZnO nanorods as an ultrafast melting and recrystallizing process for realization of the p-type ZnO. Fabrication of the p-n homo junction along ZnO nanorods has been demonstrated using phosphorus ion implantation and ns-laser annealing by a KrF excimer laser. Rectifying I-V characteristics attributed to p-n junction were observed from the measurement of electrical properties. In addition, the penetration depth of laser annealed layer was measured by observing cathode luminescence images. Then, it was turned out that high repetition rate laser annealing can anneal ZnO nanorods over the optical-absorption length. In this report, optical, structural, and electrical characteristics of the phosphorus ion-implanted ZnO nanorods annealed by the KrF excimer laser are discussed.",
author = "T. Shimogaki and T. Ofuji and N. Tetsuyama and K. Okazaki and M. Higashihata and D. Nakamura and H. Ikenoue and T. Asano and T. Okada",
year = "2013",
month = "5",
day = "30",
doi = "10.1117/12.2003856",
language = "English",
isbn = "9780819493958",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
booktitle = "Oxide-Based Materials and Devices IV",

}

TY - GEN

T1 - Applications of nanosecond laser annealing to fabricating p-n homo junction on ZnO nanorods

AU - Shimogaki, T.

AU - Ofuji, T.

AU - Tetsuyama, N.

AU - Okazaki, K.

AU - Higashihata, M.

AU - Nakamura, D.

AU - Ikenoue, H.

AU - Asano, T.

AU - Okada, T.

PY - 2013/5/30

Y1 - 2013/5/30

N2 - Zinc oxide (ZnO) has attracted considerable attension due to its wide applications in particular ultra violet light emitting diode (UV-LED). In addition, the one-dimensional ZnO crystals are quite attractive as building blocks for light emitting devices like laser and LED, because of their high crystallinity and light confinement properties. However, a method for the realization of the stable p-type ZnO has not been well established. In our study, we have investigated the effect of the nanosecond laser irradiation to the ZnO nanorods as an ultrafast melting and recrystallizing process for realization of the p-type ZnO. Fabrication of the p-n homo junction along ZnO nanorods has been demonstrated using phosphorus ion implantation and ns-laser annealing by a KrF excimer laser. Rectifying I-V characteristics attributed to p-n junction were observed from the measurement of electrical properties. In addition, the penetration depth of laser annealed layer was measured by observing cathode luminescence images. Then, it was turned out that high repetition rate laser annealing can anneal ZnO nanorods over the optical-absorption length. In this report, optical, structural, and electrical characteristics of the phosphorus ion-implanted ZnO nanorods annealed by the KrF excimer laser are discussed.

AB - Zinc oxide (ZnO) has attracted considerable attension due to its wide applications in particular ultra violet light emitting diode (UV-LED). In addition, the one-dimensional ZnO crystals are quite attractive as building blocks for light emitting devices like laser and LED, because of their high crystallinity and light confinement properties. However, a method for the realization of the stable p-type ZnO has not been well established. In our study, we have investigated the effect of the nanosecond laser irradiation to the ZnO nanorods as an ultrafast melting and recrystallizing process for realization of the p-type ZnO. Fabrication of the p-n homo junction along ZnO nanorods has been demonstrated using phosphorus ion implantation and ns-laser annealing by a KrF excimer laser. Rectifying I-V characteristics attributed to p-n junction were observed from the measurement of electrical properties. In addition, the penetration depth of laser annealed layer was measured by observing cathode luminescence images. Then, it was turned out that high repetition rate laser annealing can anneal ZnO nanorods over the optical-absorption length. In this report, optical, structural, and electrical characteristics of the phosphorus ion-implanted ZnO nanorods annealed by the KrF excimer laser are discussed.

UR - http://www.scopus.com/inward/record.url?scp=84878169231&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84878169231&partnerID=8YFLogxK

U2 - 10.1117/12.2003856

DO - 10.1117/12.2003856

M3 - Conference contribution

AN - SCOPUS:84878169231

SN - 9780819493958

T3 - Proceedings of SPIE - The International Society for Optical Engineering

BT - Oxide-Based Materials and Devices IV

ER -