Power devices play an important role in energy saving and material substrates for power devices such as sapphire, silicon carbide (SiC), gallium nitride (GaN), and diamond are attracting extensive concern. However, because of the high hardness and stable chemical properties of power device substrates, processing is very difficult. Approach to the high-efficiency and high-quality CMP of SiC wafer and a diamond substrate is presented. The experimental results show that MnO2 slurry with strong oxidizer has a great impact on improving the SiC-CMP removal rate. Moreover, a diamond substrate, which is regarded as an ultimate power device substrate, must be also polished efficiently. In our project of efficient diamond planarization process, the surface of a diamond substrate is irradiated by femtosecond (fs) laser to enhance the polishing efficiency. The cross-section image by TEM observation shows that the formation of amorphous site was successfully induced.
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