Argon dilution effects on diamond deposition in electron cyclotron resonance plasma

A double probe study

Kungen Tsutsui, H. Yoshioka, S. Ono, S. Teii

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

The Ar dilution effects on diamond deposition at moderate pressures (26.6-400 Pa) in an electron cyclotron resonance hydrogen-methane plasma have been studied in connection with electron temperature (Te) and electron density (ne). The double probe measurement revealed the dependence of Te and ne on Ar concentration, pressure, and microwave power. Te decreased in proportion to Ar concentration and was in the range of 3.7-7.5 eV. In contrast, ne exhibited only a small change with increasing Ar concentration except at a higher pressure and was on the order of 1010-1011 cm-3. The Ar dilution promoted nucleation rather than growth, as shown by an increase in nucleation density and renucleation on preexisting diamond grains. The mechanism leading to the peaked growth rate at 33-50 vol.% Ar was explained by the variation of the ion-bombardment energy and the fluxes of radicals, based on the measured Te and ne.

Original languageEnglish
Pages (from-to)63-67
Number of pages5
JournalThin Solid Films
Volume437
Issue number1-2
DOIs
Publication statusPublished - Aug 1 2003

Fingerprint

Diamond
Electron cyclotron resonance
Argon
electron cyclotron resonance
Dilution
dilution
Diamonds
diamonds
argon
Plasmas
probes
Nucleation
nucleation
Electron temperature
Methane
Ion bombardment
Temperature
Carrier concentration
temperature
bombardment

All Science Journal Classification (ASJC) codes

  • Surfaces, Coatings and Films
  • Condensed Matter Physics
  • Surfaces and Interfaces

Cite this

Argon dilution effects on diamond deposition in electron cyclotron resonance plasma : A double probe study. / Tsutsui, Kungen; Yoshioka, H.; Ono, S.; Teii, S.

In: Thin Solid Films, Vol. 437, No. 1-2, 01.08.2003, p. 63-67.

Research output: Contribution to journalArticle

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