Artificial-line-division distributed ICs with 0.1-μm-gate-length GaAs MESFET and three-dimensional transmission lines

Shunji Kimura, Yuhki Imai, Satoshi Yamaguchi, Kiyomitsu Onodera, Hiroyuki Kikuchi

Research output: Contribution to journalArticle

Abstract

0.1-μm-gate-length GaAs MESFET distributed baseband integrated circuits (ICs) that utilize an artificial-line-division technique and three-dimensional transmission lines are described. The technique reduces return loss of the distributed circuits at high frequencies, and four-layer transmission-line structure reduces parasitic impedance caused by the IC pattern shape and is suitable for the flip-chip bonding module format. A gate-line-division distributed baseband amplifier IC achieved input return loss of less than -13 dB and gain of 11.7 dB in the 0-56-GHz band. A source-line-division distributed level-shift IC achieved output return loss of less than -9.6 dB at high frequencies and insertion loss of 2.7 dB in the 0-79-GHz band. Both results better the performance of all reported GaAs MESFET distributed ICs.

Original languageEnglish
Pages (from-to)1603-1608
Number of pages6
JournalIEEE Transactions on Microwave Theory and Techniques
Volume50
Issue number6
DOIs
Publication statusPublished - Jun 1 2002
Externally publishedYes

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division
transmission lines
integrated circuits
Integrated circuits
Electric lines
field effect transistors
Insertion losses
insertion loss
format
amplifiers
modules
chips
impedance
Networks (circuits)
output
shift

All Science Journal Classification (ASJC) codes

  • Radiation
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

Artificial-line-division distributed ICs with 0.1-μm-gate-length GaAs MESFET and three-dimensional transmission lines. / Kimura, Shunji; Imai, Yuhki; Yamaguchi, Satoshi; Onodera, Kiyomitsu; Kikuchi, Hiroyuki.

In: IEEE Transactions on Microwave Theory and Techniques, Vol. 50, No. 6, 01.06.2002, p. 1603-1608.

Research output: Contribution to journalArticle

Kimura, Shunji ; Imai, Yuhki ; Yamaguchi, Satoshi ; Onodera, Kiyomitsu ; Kikuchi, Hiroyuki. / Artificial-line-division distributed ICs with 0.1-μm-gate-length GaAs MESFET and three-dimensional transmission lines. In: IEEE Transactions on Microwave Theory and Techniques. 2002 ; Vol. 50, No. 6. pp. 1603-1608.
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