0.1-μm-gate-length GaAs MESFET distributed baseband integrated circuits (ICs) that utilize an artificial-line-division technique and three-dimensional transmission lines are described. The technique reduces return loss of the distributed circuits at high frequencies, and four-layer transmission-line structure reduces parasitic impedance caused by the IC pattern shape and is suitable for the flip-chip bonding module format. A gate-line-division distributed baseband amplifier IC achieved input return loss of less than -13 dB and gain of 11.7 dB in the 0-56-GHz band. A source-line-division distributed level-shift IC achieved output return loss of less than -9.6 dB at high frequencies and insertion loss of 2.7 dB in the 0-79-GHz band. Both results better the performance of all reported GaAs MESFET distributed ICs.
|Number of pages||6|
|Journal||IEEE Transactions on Microwave Theory and Techniques|
|Publication status||Published - Jun 1 2002|
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Electrical and Electronic Engineering