ASE Spectrum Analysis on Active-MMI SOA toward High Saturation Output Power at High Temperature

Zhiyuan Fan; Yasuhiro Hinokuma; Haisong Jiang; Kiichi Hamamoto

doi:10.1109/ISLC51662.2021.9615683

ASE Spectrum Analysis on Active-MMI SOA toward High Saturation Output Power at High Temperature

Zhiyuan Fan, Yasuhiro Hinokuma, Haisong Jiang, Kiichi Hamamoto

Electrical Engineering Sciences

Research output: Contribution to journal › Conference article › peer-review

Abstract

We have found significant enhancement of 15 dBm saturation output power at 75°C, compared to regular SOA, by using active-MMI configuration on quantum dot. Based on ASE (amplified spontaneous emission) analysis, significant carrier accumulation capability into ground state is demonstrated in the active-MMI configuration.

Original language	English
Journal	Conference Digest - IEEE International Semiconductor Laser Conference
DOIs	https://doi.org/10.1109/ISLC51662.2021.9615683
Publication status	Published - 2021
Event	27th International Semiconductor Laser Conference, ISLC 2021 - Potsdam, Germany Duration: Oct 10 2021 → Oct 14 2021

All Science Journal Classification (ASJC) codes

Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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10.1109/ISLC51662.2021.9615683

Cite this

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title = "ASE Spectrum Analysis on Active-MMI SOA toward High Saturation Output Power at High Temperature",

abstract = "We have found significant enhancement of 15 dBm saturation output power at 75°C, compared to regular SOA, by using active-MMI configuration on quantum dot. Based on ASE (amplified spontaneous emission) analysis, significant carrier accumulation capability into ground state is demonstrated in the active-MMI configuration.",

author = "Zhiyuan Fan and Yasuhiro Hinokuma and Haisong Jiang and Kiichi Hamamoto",

note = "Publisher Copyright: {\textcopyright} 2021 IEEE.; 27th International Semiconductor Laser Conference, ISLC 2021 ; Conference date: 10-10-2021 Through 14-10-2021",

year = "2021",

doi = "10.1109/ISLC51662.2021.9615683",

language = "English",

journal = "Conference Digest - IEEE International Semiconductor Laser Conference",

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AU - Fan, Zhiyuan

AU - Hinokuma, Yasuhiro

AU - Jiang, Haisong

AU - Hamamoto, Kiichi

PY - 2021

Y1 - 2021

N2 - We have found significant enhancement of 15 dBm saturation output power at 75°C, compared to regular SOA, by using active-MMI configuration on quantum dot. Based on ASE (amplified spontaneous emission) analysis, significant carrier accumulation capability into ground state is demonstrated in the active-MMI configuration.

AB - We have found significant enhancement of 15 dBm saturation output power at 75°C, compared to regular SOA, by using active-MMI configuration on quantum dot. Based on ASE (amplified spontaneous emission) analysis, significant carrier accumulation capability into ground state is demonstrated in the active-MMI configuration.

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DO - 10.1109/ISLC51662.2021.9615683

M3 - Conference article

AN - SCOPUS:85122889707

JO - Conference Digest - IEEE International Semiconductor Laser Conference

JF - Conference Digest - IEEE International Semiconductor Laser Conference

SN - 0899-9406

T2 - 27th International Semiconductor Laser Conference, ISLC 2021

Y2 - 10 October 2021 through 14 October 2021

ER -

ASE Spectrum Analysis on Active-MMI SOA toward High Saturation Output Power at High Temperature

Abstract

All Science Journal Classification (ASJC) codes

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