Assist Gate MOSFETs for Improvement of On-Resistance and Turn-Off Loss Trade-Off

Research output: Contribution to journalArticlepeer-review

Abstract

Assist Gate (AG) MOSFET is proposed for low power loss operation of low-voltage power MOSFETs by a new structure with the optimum gate control. The second channel and accumulation layer reduce the channel and drift resistances. In addition, the gate control of AG-MOSFET decreases turn-off loss. 40 and 100 V-class AG-MOSFET characteristics were analyzed using TCAD simulation. The AG-MOSFET improves on-resistance and turn-off loss trade-off. The simulation results show 34% lower on-resistance with 16% lower turn-off loss for 40 V-class device and 21% lower on-resistance with 10% lower turn-off loss for 100 V-class device.

Original languageEnglish
Article number9085363
Pages (from-to)1060-1062
Number of pages3
JournalIEEE Electron Device Letters
Volume41
Issue number7
DOIs
Publication statusPublished - Jul 2020
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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