Assist Gate (AG) MOSFET is proposed for low power loss operation of low-voltage power MOSFETs by a new structure with the optimum gate control. The second channel and accumulation layer reduce the channel and drift resistances. In addition, the gate control of AG-MOSFET decreases turn-off loss. 40 and 100 V-class AG-MOSFET characteristics were analyzed using TCAD simulation. The AG-MOSFET improves on-resistance and turn-off loss trade-off. The simulation results show 34% lower on-resistance with 16% lower turn-off loss for 40 V-class device and 21% lower on-resistance with 10% lower turn-off loss for 100 V-class device.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering