Asymmetric distribution of oxygen concentration in the Si melt of a Czochralski system

K. W. Yi, K. Kakimoto, Z. G. Niu, M. Eguchi, H. Noguchi, S. Nakamura, K. Mukai

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

Oxygen concentration in the Si melt of a Czochralski system was measured by immersing an oxygen sensor in the melt. The measurement clarified the existence of an inhomogeneous distribution of oxygen whose pattern was similar to the temperature distribution in the melt. This result suggests that the oxygen profile in the Si melt is not axisymmetric, although the furnace structure is axisymmetric. This oxygen fluctuation is proposed to be one reason for striations appearing in the grown crystals.

Original languageEnglish
Pages (from-to)722-725
Number of pages4
JournalJournal of the Electrochemical Society
Volume143
Issue number2
DOIs
Publication statusPublished - Feb 1996
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

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