Atom-migration effect during crystallization of a-SiGe films by SR soft x-ray irradiation

Shota Kino; Yuki Nonomura; Akira Heya; Naoto Matsuo; Kazuhiro Kanda; Shuji Miyamoto; Sho Amano; Takayasu Mochizuki; Kaoru Toko; Taizoh Sadoh; Masanobu Miyao

Atom-migration effect during crystallization of a-SiGe films by SR soft x-ray irradiation

Shota Kino, Yuki Nonomura, Akira Heya, Naoto Matsuo, Kazuhiro Kanda, Shuji Miyamoto, Sho Amano, Takayasu Mochizuki, Kaoru Toko, Taizoh Sadoh, Masanobu Miyao

Electronic Devices

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Citations (Scopus)

Abstract

We investigated a low-temperature crystallization of a- Si, a-Ge and a-Si_1-xGe_x films by the synchrotron radiation (SR) soft X-ray irradiation at storage ring current of 25-220 mA. Crystallization of SiGe caused by the atomic migration during soft X-ray irradiation is effective as compared with the thermal annealing.

Original language	English
Title of host publication	Society for Information Display - 18th International Display Workshops 2011, IDW'11
Pages	659-662
Number of pages	4
Volume	1
Publication status	Published - 2011
Event	18th International Display Workshops 2011, IDW 2011 - Nagoya, Japan Duration: Dec 7 2011 → Dec 9 2011

Other

Other	18th International Display Workshops 2011, IDW 2011
Country	Japan
City	Nagoya
Period	12/7/11 → 12/9/11

All Science Journal Classification (ASJC) codes

Computer Vision and Pattern Recognition
Human-Computer Interaction
Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials
Radiology Nuclear Medicine and imaging

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Atom-migration effect during crystallization of a-SiGe films by SR soft x-ray irradiation. / Kino, Shota; Nonomura, Yuki; Heya, Akira; Matsuo, Naoto; Kanda, Kazuhiro; Miyamoto, Shuji; Amano, Sho; Mochizuki, Takayasu; Toko, Kaoru; Sadoh, Taizoh; Miyao, Masanobu.

Society for Information Display - 18th International Display Workshops 2011, IDW'11. Vol. 1 2011. p. 659-662.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Kino, S, Nonomura, Y, Heya, A, Matsuo, N, Kanda, K, Miyamoto, S, Amano, S, Mochizuki, T, Toko, K, Sadoh, T & Miyao, M 2011, Atom-migration effect during crystallization of a-SiGe films by SR soft x-ray irradiation. in Society for Information Display - 18th International Display Workshops 2011, IDW'11. vol. 1, pp. 659-662, 18th International Display Workshops 2011, IDW 2011, Nagoya, Japan, 12/7/11.

Kino, Shota ; Nonomura, Yuki ; Heya, Akira ; Matsuo, Naoto ; Kanda, Kazuhiro ; Miyamoto, Shuji ; Amano, Sho ; Mochizuki, Takayasu ; Toko, Kaoru ; Sadoh, Taizoh ; Miyao, Masanobu. / Atom-migration effect during crystallization of a-SiGe films by SR soft x-ray irradiation. Society for Information Display - 18th International Display Workshops 2011, IDW'11. Vol. 1 2011. pp. 659-662

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abstract = "We investigated a low-temperature crystallization of a- Si, a-Ge and a-Si1-xGex films by the synchrotron radiation (SR) soft X-ray irradiation at storage ring current of 25-220 mA. Crystallization of SiGe caused by the atomic migration during soft X-ray irradiation is effective as compared with the thermal annealing.",

author = "Shota Kino and Yuki Nonomura and Akira Heya and Naoto Matsuo and Kazuhiro Kanda and Shuji Miyamoto and Sho Amano and Takayasu Mochizuki and Kaoru Toko and Taizoh Sadoh and Masanobu Miyao",

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T1 - Atom-migration effect during crystallization of a-SiGe films by SR soft x-ray irradiation

AU - Kino, Shota

AU - Nonomura, Yuki

AU - Heya, Akira

AU - Matsuo, Naoto

AU - Kanda, Kazuhiro

AU - Miyamoto, Shuji

AU - Amano, Sho

AU - Mochizuki, Takayasu

AU - Toko, Kaoru

AU - Sadoh, Taizoh

AU - Miyao, Masanobu

PY - 2011

Y1 - 2011

N2 - We investigated a low-temperature crystallization of a- Si, a-Ge and a-Si1-xGex films by the synchrotron radiation (SR) soft X-ray irradiation at storage ring current of 25-220 mA. Crystallization of SiGe caused by the atomic migration during soft X-ray irradiation is effective as compared with the thermal annealing.

AB - We investigated a low-temperature crystallization of a- Si, a-Ge and a-Si1-xGex films by the synchrotron radiation (SR) soft X-ray irradiation at storage ring current of 25-220 mA. Crystallization of SiGe caused by the atomic migration during soft X-ray irradiation is effective as compared with the thermal annealing.

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M3 - Conference contribution

AN - SCOPUS:84870701840

SN - 9781622761906

VL - 1

SP - 659

EP - 662

BT - Society for Information Display - 18th International Display Workshops 2011, IDW'11

T2 - 18th International Display Workshops 2011, IDW 2011

Y2 - 7 December 2011 through 9 December 2011

ER -