Abstract
We investigated a low-temperature crystallization of a- Si, a-Ge and a-Si1-xGex films by the synchrotron radiation (SR) soft X-ray irradiation at storage ring current of 25-220 mA. Crystallization of SiGe caused by the atomic migration during soft X-ray irradiation is effective as compared with the thermal annealing.
Original language | English |
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Title of host publication | Society for Information Display - 18th International Display Workshops 2011, IDW'11 |
Pages | 659-662 |
Number of pages | 4 |
Volume | 1 |
Publication status | Published - 2011 |
Event | 18th International Display Workshops 2011, IDW 2011 - Nagoya, Japan Duration: Dec 7 2011 → Dec 9 2011 |
Other
Other | 18th International Display Workshops 2011, IDW 2011 |
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Country | Japan |
City | Nagoya |
Period | 12/7/11 → 12/9/11 |
All Science Journal Classification (ASJC) codes
- Computer Vision and Pattern Recognition
- Human-Computer Interaction
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
- Radiology Nuclear Medicine and imaging