Atom-migration effect during crystallization of a-SiGe films by SR soft x-ray irradiation

Shota Kino; Yuki Nonomura; Akira Heya; Naoto Matsuo; Kazuhiro Kanda; Shuji Miyamoto; Sho Amano; Takayasu Mochizuki; Kaoru Toko; Taizoh Sadoh; Masanobu Miyao

Atom-migration effect during crystallization of a-SiGe films by SR soft x-ray irradiation

Shota Kino, Yuki Nonomura, Akira Heya, Naoto Matsuo, Kazuhiro Kanda, Shuji Miyamoto, Sho Amano, Takayasu Mochizuki, Kaoru Toko, Taizoh Sadoh, Masanobu Miyao

Electronic Devices

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Citations (Scopus)

Abstract

We investigated a low-temperature crystallization of a- Si, a-Ge and a-Si_1-xGe_x films by the synchrotron radiation (SR) soft X-ray irradiation at storage ring current of 25-220 mA. Crystallization of SiGe caused by the atomic migration during soft X-ray irradiation is effective as compared with the thermal annealing.

Original language	English
Title of host publication	Society for Information Display - 18th International Display Workshops 2011, IDW'11
Pages	659-662
Number of pages	4
Publication status	Published - 2011
Event	18th International Display Workshops 2011, IDW 2011 - Nagoya, Japan Duration: Dec 7 2011 → Dec 9 2011

Publication series

Name	Proceedings of the International Display Workshops
Volume	1
ISSN (Print)	1883-2490

Other

Other	18th International Display Workshops 2011, IDW 2011
Country/Territory	Japan
City	Nagoya
Period	12/7/11 → 12/9/11

All Science Journal Classification (ASJC) codes

Computer Vision and Pattern Recognition
Human-Computer Interaction
Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials
Radiology Nuclear Medicine and imaging

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Cite this

Kino, S., Nonomura, Y., Heya, A., Matsuo, N., Kanda, K., Miyamoto, S., Amano, S., Mochizuki, T., Toko, K., Sadoh, T., & Miyao, M. (2011). Atom-migration effect during crystallization of a-SiGe films by SR soft x-ray irradiation. In Society for Information Display - 18th International Display Workshops 2011, IDW'11 (pp. 659-662). (Proceedings of the International Display Workshops; Vol. 1).

Atom-migration effect during crystallization of a-SiGe films by SR soft x-ray irradiation. / Kino, Shota; Nonomura, Yuki; Heya, Akira et al.

Society for Information Display - 18th International Display Workshops 2011, IDW'11. 2011. p. 659-662 (Proceedings of the International Display Workshops; Vol. 1).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Kino, S, Nonomura, Y, Heya, A, Matsuo, N, Kanda, K, Miyamoto, S, Amano, S, Mochizuki, T, Toko, K, Sadoh, T & Miyao, M 2011, Atom-migration effect during crystallization of a-SiGe films by SR soft x-ray irradiation. in Society for Information Display - 18th International Display Workshops 2011, IDW'11. Proceedings of the International Display Workshops, vol. 1, pp. 659-662, 18th International Display Workshops 2011, IDW 2011, Nagoya, Japan, 12/7/11.

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abstract = "We investigated a low-temperature crystallization of a- Si, a-Ge and a-Si1-xGex films by the synchrotron radiation (SR) soft X-ray irradiation at storage ring current of 25-220 mA. Crystallization of SiGe caused by the atomic migration during soft X-ray irradiation is effective as compared with the thermal annealing.",

author = "Shota Kino and Yuki Nonomura and Akira Heya and Naoto Matsuo and Kazuhiro Kanda and Shuji Miyamoto and Sho Amano and Takayasu Mochizuki and Kaoru Toko and Taizoh Sadoh and Masanobu Miyao",

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AU - Kino, Shota

AU - Nonomura, Yuki

AU - Heya, Akira

AU - Matsuo, Naoto

AU - Kanda, Kazuhiro

AU - Miyamoto, Shuji

AU - Amano, Sho

AU - Mochizuki, Takayasu

AU - Toko, Kaoru

AU - Sadoh, Taizoh

AU - Miyao, Masanobu

PY - 2011

Y1 - 2011

N2 - We investigated a low-temperature crystallization of a- Si, a-Ge and a-Si1-xGex films by the synchrotron radiation (SR) soft X-ray irradiation at storage ring current of 25-220 mA. Crystallization of SiGe caused by the atomic migration during soft X-ray irradiation is effective as compared with the thermal annealing.

AB - We investigated a low-temperature crystallization of a- Si, a-Ge and a-Si1-xGex films by the synchrotron radiation (SR) soft X-ray irradiation at storage ring current of 25-220 mA. Crystallization of SiGe caused by the atomic migration during soft X-ray irradiation is effective as compared with the thermal annealing.

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M3 - Conference contribution

AN - SCOPUS:84870701840

SN - 9781622761906

T3 - Proceedings of the International Display Workshops

SP - 659

EP - 662

BT - Society for Information Display - 18th International Display Workshops 2011, IDW'11

T2 - 18th International Display Workshops 2011, IDW 2011

Y2 - 7 December 2011 through 9 December 2011

ER -

Atom-migration effect during crystallization of a-SiGe films by SR soft x-ray irradiation

Abstract

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Other

All Science Journal Classification (ASJC) codes

UN SDGs

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