TY - GEN
T1 - Atom-migration effect during crystallization of a-SiGe films by SR soft x-ray irradiation
AU - Kino, Shota
AU - Nonomura, Yuki
AU - Heya, Akira
AU - Matsuo, Naoto
AU - Kanda, Kazuhiro
AU - Miyamoto, Shuji
AU - Amano, Sho
AU - Mochizuki, Takayasu
AU - Toko, Kaoru
AU - Sadoh, Taizoh
AU - Miyao, Masanobu
PY - 2011
Y1 - 2011
N2 - We investigated a low-temperature crystallization of a- Si, a-Ge and a-Si1-xGex films by the synchrotron radiation (SR) soft X-ray irradiation at storage ring current of 25-220 mA. Crystallization of SiGe caused by the atomic migration during soft X-ray irradiation is effective as compared with the thermal annealing.
AB - We investigated a low-temperature crystallization of a- Si, a-Ge and a-Si1-xGex films by the synchrotron radiation (SR) soft X-ray irradiation at storage ring current of 25-220 mA. Crystallization of SiGe caused by the atomic migration during soft X-ray irradiation is effective as compared with the thermal annealing.
UR - http://www.scopus.com/inward/record.url?scp=84870701840&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84870701840&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:84870701840
SN - 9781622761906
T3 - Proceedings of the International Display Workshops
SP - 659
EP - 662
BT - Society for Information Display - 18th International Display Workshops 2011, IDW'11
T2 - 18th International Display Workshops 2011, IDW 2011
Y2 - 7 December 2011 through 9 December 2011
ER -