Abstract
We investigated a low-temperature crystallization of a- Si, a-Ge and a-Si1-xGex films by the synchrotron radiation (SR) soft X-ray irradiation at storage ring current of 25-220 mA. Crystallization of SiGe caused by the atomic migration during soft X-ray irradiation is effective as compared with the thermal annealing.
| Original language | English |
|---|---|
| Title of host publication | Society for Information Display - 18th International Display Workshops 2011, IDW'11 |
| Pages | 659-662 |
| Number of pages | 4 |
| Volume | 1 |
| Publication status | Published - 2011 |
| Event | 18th International Display Workshops 2011, IDW 2011 - Nagoya, Japan Duration: Dec 7 2011 → Dec 9 2011 |
Other
| Other | 18th International Display Workshops 2011, IDW 2011 |
|---|---|
| Country | Japan |
| City | Nagoya |
| Period | 12/7/11 → 12/9/11 |
Fingerprint
All Science Journal Classification (ASJC) codes
- Computer Vision and Pattern Recognition
- Human-Computer Interaction
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
- Radiology Nuclear Medicine and imaging
Cite this
Kino, S., Nonomura, Y., Heya, A., Matsuo, N., Kanda, K., Miyamoto, S., ... Miyao, M. (2011). Atom-migration effect during crystallization of a-SiGe films by SR soft x-ray irradiation. In Society for Information Display - 18th International Display Workshops 2011, IDW'11 (Vol. 1, pp. 659-662)