Atom-migration effect during crystallization of a-SiGe films by SR soft x-ray irradiation

Shota Kino, Yuki Nonomura, Akira Heya, Naoto Matsuo, Kazuhiro Kanda, Shuji Miyamoto, Sho Amano, Takayasu Mochizuki, Kaoru Toko, Taizoh Sadoh, Masanobu Miyao

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

We investigated a low-temperature crystallization of a- Si, a-Ge and a-Si1-xGex films by the synchrotron radiation (SR) soft X-ray irradiation at storage ring current of 25-220 mA. Crystallization of SiGe caused by the atomic migration during soft X-ray irradiation is effective as compared with the thermal annealing.

Original languageEnglish
Title of host publicationSociety for Information Display - 18th International Display Workshops 2011, IDW'11
Pages659-662
Number of pages4
Volume1
Publication statusPublished - 2011
Event18th International Display Workshops 2011, IDW 2011 - Nagoya, Japan
Duration: Dec 7 2011Dec 9 2011

Other

Other18th International Display Workshops 2011, IDW 2011
CountryJapan
CityNagoya
Period12/7/1112/9/11

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All Science Journal Classification (ASJC) codes

  • Computer Vision and Pattern Recognition
  • Human-Computer Interaction
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Radiology Nuclear Medicine and imaging

Cite this

Kino, S., Nonomura, Y., Heya, A., Matsuo, N., Kanda, K., Miyamoto, S., ... Miyao, M. (2011). Atom-migration effect during crystallization of a-SiGe films by SR soft x-ray irradiation. In Society for Information Display - 18th International Display Workshops 2011, IDW'11 (Vol. 1, pp. 659-662)