ATOM-PROBE STUDY OF THE EARLY STAGE OF SILICIDE FORMATION. I. W-Si SYSTEM.

Osamu Nishikawa, Yoshitaka Tsunashima, Eiichi Nomura, Shiro Horie, Minoru Wada, Mezame Shibata, Toshihiko Yoshimura, Ryuji Uemori

Research output: Contribution to journalArticle

28 Citations (Scopus)

Abstract

The early stage of silicide formation was studied by depositing Si on W tip specimens of the FIM and the atom probe. The optimum temperature for W silicide formation was found to be 900-1000 K and its composition was WSi//2. The observed FIM image of the silicide agreed well with the computer-simulated image which was composed of the W atoms of the tetragonal C 11b structure. The silicide often grew independently on each W left brace 001 right brace plane because the W lattice constant of these planes matches well with that of the basal plane of the silicide. The boundary between the independently grown silicides was also observed along the expected areas from the simulated image.

Original languageEnglish
Pages (from-to)6-9
Number of pages4
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume1
Issue number1
DOIs
Publication statusPublished - Jan 1983
Externally publishedYes

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Atoms
Silicides
probes
Lattice constants
atoms
silicides
Chemical analysis
Temperature
temperature

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

ATOM-PROBE STUDY OF THE EARLY STAGE OF SILICIDE FORMATION. I. W-Si SYSTEM. / Nishikawa, Osamu; Tsunashima, Yoshitaka; Nomura, Eiichi; Horie, Shiro; Wada, Minoru; Shibata, Mezame; Yoshimura, Toshihiko; Uemori, Ryuji.

In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 1, No. 1, 01.1983, p. 6-9.

Research output: Contribution to journalArticle

Nishikawa, Osamu ; Tsunashima, Yoshitaka ; Nomura, Eiichi ; Horie, Shiro ; Wada, Minoru ; Shibata, Mezame ; Yoshimura, Toshihiko ; Uemori, Ryuji. / ATOM-PROBE STUDY OF THE EARLY STAGE OF SILICIDE FORMATION. I. W-Si SYSTEM. In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 1983 ; Vol. 1, No. 1. pp. 6-9.
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