ATOM-PROBE STUDY OF THE EARLY STAGE OF SILICIDE FORMATION. I. W-Si SYSTEM.

Osamu Nishikawa; Yoshitaka Tsunashima; Eiichi Nomura; Shiro Horie; Minoru Wada; Mezame Shibata; Toshihiko Yoshimura; Ryuji Uemori

doi:10.1116/1.582506

ATOM-PROBE STUDY OF THE EARLY STAGE OF SILICIDE FORMATION. I. W-Si SYSTEM.

Osamu Nishikawa, Yoshitaka Tsunashima, Eiichi Nomura, Shiro Horie, Minoru Wada, Mezame Shibata, Toshihiko Yoshimura, Ryuji Uemori

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1 Citation (Scopus)

Abstract

The early stage of silicide formation was studied by depositing Si on W tip specimens of the FIM and the atom probe. The optimum temperature for W silicide formation was found to be 900-1000 K and its composition was WSi//2. The observed FIM image of the silicide agreed well with the computer-simulated image which was composed of the W atoms of the tetragonal C 11b structure. The silicide often grew independently on each W left brace 001 right brace plane because the W lattice constant of these planes matches well with that of the basal plane of the silicide. The boundary between the independently grown silicides was also observed along the expected areas from the simulated image.

Original language	English
Pages (from-to)	6-9
Number of pages	4
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	1
Issue number	1
DOIs	https://doi.org/10.1116/1.582506
Publication status	Published - Jan 1 1983
Externally published	Yes

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Electrical and Electronic Engineering

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abstract = "The early stage of silicide formation was studied by depositing Si on W tip specimens of the FIM and the atom probe. The optimum temperature for W silicide formation was found to be 900-1000 K and its composition was WSi//2. The observed FIM image of the silicide agreed well with the computer-simulated image which was composed of the W atoms of the tetragonal C 11b structure. The silicide often grew independently on each W left brace 001 right brace plane because the W lattice constant of these planes matches well with that of the basal plane of the silicide. The boundary between the independently grown silicides was also observed along the expected areas from the simulated image.",

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AU - Nishikawa, Osamu

AU - Tsunashima, Yoshitaka

AU - Nomura, Eiichi

AU - Horie, Shiro

AU - Wada, Minoru

AU - Shibata, Mezame

AU - Yoshimura, Toshihiko

AU - Uemori, Ryuji

PY - 1983/1/1

Y1 - 1983/1/1

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ATOM-PROBE STUDY OF THE EARLY STAGE OF SILICIDE FORMATION. I. W-Si SYSTEM.

Abstract

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