Atom-probe study of the initial stage of silicide formation

Osamu Nishikawa, Yoshitaka Tsunashima, Eiichi Nomura, Minoru Wada, Shiro Horie, Mezame Shibata, Toshihiko Yoshimura, Ryuji Uemori

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Abstract

The initial stage of silicide formation was investigated utilizing the high mass resolution atom probe. Silicon-deposited Ni and W specimen tips were heated to various temperatures in a vacuum of 10-7 Pa. A highly ordered image, which agreed well with the computer-simulated image of WSi2 with the C11b structure, was observed after heating the tip to 950 K. Ni formed a mixed layer with Si even at 80 K. The depth profile of the silicide composition changed with temperature due to a high diffusibility of Ni. The silicide formed above 900 K consistently showed a well-ordered image corresponding to a cubic structure, while its composition varied from Ni3Si2 to NiSi with depth. The computer-simulated image suggests that the observed ordered structure could be a modified Cl structure. The evaporation field of the ordered silicide was found to be significantly higher than those of pure Ni and Si, possibly due to a strong binding between the constituent atoms.

Original languageEnglish
Pages (from-to)529-533
Number of pages5
JournalSurface Science
Volume126
Issue number1-3
DOIs
Publication statusPublished - Mar 2 1983
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

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    Nishikawa, O., Tsunashima, Y., Nomura, E., Wada, M., Horie, S., Shibata, M., Yoshimura, T., & Uemori, R. (1983). Atom-probe study of the initial stage of silicide formation. Surface Science, 126(1-3), 529-533. https://doi.org/10.1016/0039-6028(83)90753-7