Atomic arrangement and in composition in InGaN quantum wells

Research output: Chapter in Book/Report/Conference proceedingChapter

Abstract

In this section, atomic arrangement and indium incorporation in InGaN epitaxial layers are discussed. Chichibu et al. have studied why In-containing (Al, In, Ga)N films exhibit a defect-insensitive emission probability.

Original languageEnglish
Title of host publicationSpringer Series in Materials Science
PublisherSpringer Verlag
Pages109-124
Number of pages16
DOIs
Publication statusPublished - 2018

Publication series

NameSpringer Series in Materials Science
Volume269
ISSN (Print)0933-033X

All Science Journal Classification (ASJC) codes

  • Materials Science(all)

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