Atomic arrangement and in composition in InGaN quantum wells

Research output: Chapter in Book/Report/Conference proceedingChapter

Abstract

In this section, atomic arrangement and indium incorporation in InGaN epitaxial layers are discussed. Chichibu et al. have studied why In-containing (Al, In, Ga)N films exhibit a defect-insensitive emission probability.

Original languageEnglish
Title of host publicationSpringer Series in Materials Science
PublisherSpringer Verlag
Pages109-124
Number of pages16
DOIs
Publication statusPublished - Jan 1 2018

Publication series

NameSpringer Series in Materials Science
Volume269
ISSN (Print)0933-033X

Fingerprint

Indium
Epitaxial layers
Semiconductor quantum wells
Defects
Chemical analysis

All Science Journal Classification (ASJC) codes

  • Materials Science(all)

Cite this

Kangawa, Y. (2018). Atomic arrangement and in composition in InGaN quantum wells. In Springer Series in Materials Science (pp. 109-124). (Springer Series in Materials Science; Vol. 269). Springer Verlag. https://doi.org/10.1007/978-3-319-76641-6_6

Atomic arrangement and in composition in InGaN quantum wells. / Kangawa, Yoshihiro.

Springer Series in Materials Science. Springer Verlag, 2018. p. 109-124 (Springer Series in Materials Science; Vol. 269).

Research output: Chapter in Book/Report/Conference proceedingChapter

Kangawa, Y 2018, Atomic arrangement and in composition in InGaN quantum wells. in Springer Series in Materials Science. Springer Series in Materials Science, vol. 269, Springer Verlag, pp. 109-124. https://doi.org/10.1007/978-3-319-76641-6_6
Kangawa Y. Atomic arrangement and in composition in InGaN quantum wells. In Springer Series in Materials Science. Springer Verlag. 2018. p. 109-124. (Springer Series in Materials Science). https://doi.org/10.1007/978-3-319-76641-6_6
Kangawa, Yoshihiro. / Atomic arrangement and in composition in InGaN quantum wells. Springer Series in Materials Science. Springer Verlag, 2018. pp. 109-124 (Springer Series in Materials Science).
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