Atomic hydrogen temperature in silane plasmas used for the deposition of a-Si:H films

K. Miyazaki, T. Kajiwara, Kiichiro Uchino, K. Muraoka, T. Okada, M. Maeda

Research output: Contribution to journalArticle

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Abstract

Atomic hydrogen temperature in a silane plasma used for the deposition of a-Si:H films was measured using a two-photon laser-induced fluorescence technique. The temperature was found to be 2200±600 K and higher than both the parent-gas temperature and the atomic hydrogen temperature in a hydrogen plasma. We considered the mechanism of atomic hydrogen temperature determination in the plasma as follows. Hydrogen atoms generated by the dissociation of gas molecules due to electron impact in the plasma have a kinetic energy of several eV, which they then lose through collisions with gas molecules. At the same time, they disappear from the plasma due to chemical reactions and diffusion before thermal equilibrium with gas molecules has been established. Thus, an atomic hydrogen temperature higher than that of gas molecules becomes the equilibrium value in the plasma. We show, in the new experiment, that this model provides a good estimation of atomic hydrogen temperature in the plasma under various conditions of silane-hydrogen mixtures.

Original languageEnglish
Pages (from-to)3197-3201
Number of pages5
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume17
Issue number6
DOIs
Publication statusPublished - Jan 1 1999

Fingerprint

Silanes
silanes
Hydrogen
Plasmas
hydrogen
Gases
gases
Temperature
Molecules
temperature
molecules
hydrogen plasma
thermal diffusion
gas temperature
laser induced fluorescence
electron impact
Thermal diffusion
hydrogen atoms
chemical reactions
kinetic energy

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

Cite this

Atomic hydrogen temperature in silane plasmas used for the deposition of a-Si:H films. / Miyazaki, K.; Kajiwara, T.; Uchino, Kiichiro; Muraoka, K.; Okada, T.; Maeda, M.

In: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, Vol. 17, No. 6, 01.01.1999, p. 3197-3201.

Research output: Contribution to journalArticle

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AU - Kajiwara, T.

AU - Uchino, Kiichiro

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AU - Okada, T.

AU - Maeda, M.

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N2 - Atomic hydrogen temperature in a silane plasma used for the deposition of a-Si:H films was measured using a two-photon laser-induced fluorescence technique. The temperature was found to be 2200±600 K and higher than both the parent-gas temperature and the atomic hydrogen temperature in a hydrogen plasma. We considered the mechanism of atomic hydrogen temperature determination in the plasma as follows. Hydrogen atoms generated by the dissociation of gas molecules due to electron impact in the plasma have a kinetic energy of several eV, which they then lose through collisions with gas molecules. At the same time, they disappear from the plasma due to chemical reactions and diffusion before thermal equilibrium with gas molecules has been established. Thus, an atomic hydrogen temperature higher than that of gas molecules becomes the equilibrium value in the plasma. We show, in the new experiment, that this model provides a good estimation of atomic hydrogen temperature in the plasma under various conditions of silane-hydrogen mixtures.

AB - Atomic hydrogen temperature in a silane plasma used for the deposition of a-Si:H films was measured using a two-photon laser-induced fluorescence technique. The temperature was found to be 2200±600 K and higher than both the parent-gas temperature and the atomic hydrogen temperature in a hydrogen plasma. We considered the mechanism of atomic hydrogen temperature determination in the plasma as follows. Hydrogen atoms generated by the dissociation of gas molecules due to electron impact in the plasma have a kinetic energy of several eV, which they then lose through collisions with gas molecules. At the same time, they disappear from the plasma due to chemical reactions and diffusion before thermal equilibrium with gas molecules has been established. Thus, an atomic hydrogen temperature higher than that of gas molecules becomes the equilibrium value in the plasma. We show, in the new experiment, that this model provides a good estimation of atomic hydrogen temperature in the plasma under various conditions of silane-hydrogen mixtures.

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