Atomic layer deposition of aluminum (111) thin film by dimethylethylaminealane precursor

Sameh Okasha; Yoshiaki Sekine; Satoshi Sasaki; Yuichi Harada

doi:10.1016/j.tsf.2021.138784

Atomic layer deposition of aluminum (111) thin film by dimethylethylaminealane precursor

Sameh Okasha, Yoshiaki Sekine, Satoshi Sasaki, Yuichi Harada

KOINE Project Division

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

We report the growth of aluminum (111) thin film by atomic layer deposition (ALD) technique with dimethylethylaminealane (DMEAA) as a precursor. It is found that the metallic underlayer is essential to grow uniform aluminum films by DMEAA precursor. As a titanium thin film is used as the underlayer, grown aluminum thin film shows (111) orientation irrespective of substrates. The lattice constant and superconducting transition temperature of the aluminum thin films are the same as the bulk one. These findings suggest that ALD technique provides high quality of the aluminum thin films and have potential for the applications of superconducting devices. We discuss ALD technique with DMEAA precursor is the promising method for fabricating vertical small Josephson tunnel junctions, which can be used as the superconducting quantum bits.

Original language	English
Article number	138784
Journal	Thin Solid Films
Volume	732
DOIs	https://doi.org/10.1016/j.tsf.2021.138784
Publication status	Published - Aug 31 2021

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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title = "Atomic layer deposition of aluminum (111) thin film by dimethylethylaminealane precursor",

abstract = "We report the growth of aluminum (111) thin film by atomic layer deposition (ALD) technique with dimethylethylaminealane (DMEAA) as a precursor. It is found that the metallic underlayer is essential to grow uniform aluminum films by DMEAA precursor. As a titanium thin film is used as the underlayer, grown aluminum thin film shows (111) orientation irrespective of substrates. The lattice constant and superconducting transition temperature of the aluminum thin films are the same as the bulk one. These findings suggest that ALD technique provides high quality of the aluminum thin films and have potential for the applications of superconducting devices. We discuss ALD technique with DMEAA precursor is the promising method for fabricating vertical small Josephson tunnel junctions, which can be used as the superconducting quantum bits.",

author = "Sameh Okasha and Yoshiaki Sekine and Satoshi Sasaki and Yuichi Harada",

note = "Funding Information: One of the authors is grateful for the financial assistance provided by the green Asia program at Kyushu University. Publisher Copyright: {\textcopyright} 2021 Elsevier B.V.",

year = "2021",

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doi = "10.1016/j.tsf.2021.138784",

language = "English",

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journal = "Thin Solid Films",

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T1 - Atomic layer deposition of aluminum (111) thin film by dimethylethylaminealane precursor

AU - Okasha, Sameh

AU - Sekine, Yoshiaki

AU - Sasaki, Satoshi

AU - Harada, Yuichi

PY - 2021/8/31

Y1 - 2021/8/31

N2 - We report the growth of aluminum (111) thin film by atomic layer deposition (ALD) technique with dimethylethylaminealane (DMEAA) as a precursor. It is found that the metallic underlayer is essential to grow uniform aluminum films by DMEAA precursor. As a titanium thin film is used as the underlayer, grown aluminum thin film shows (111) orientation irrespective of substrates. The lattice constant and superconducting transition temperature of the aluminum thin films are the same as the bulk one. These findings suggest that ALD technique provides high quality of the aluminum thin films and have potential for the applications of superconducting devices. We discuss ALD technique with DMEAA precursor is the promising method for fabricating vertical small Josephson tunnel junctions, which can be used as the superconducting quantum bits.

AB - We report the growth of aluminum (111) thin film by atomic layer deposition (ALD) technique with dimethylethylaminealane (DMEAA) as a precursor. It is found that the metallic underlayer is essential to grow uniform aluminum films by DMEAA precursor. As a titanium thin film is used as the underlayer, grown aluminum thin film shows (111) orientation irrespective of substrates. The lattice constant and superconducting transition temperature of the aluminum thin films are the same as the bulk one. These findings suggest that ALD technique provides high quality of the aluminum thin films and have potential for the applications of superconducting devices. We discuss ALD technique with DMEAA precursor is the promising method for fabricating vertical small Josephson tunnel junctions, which can be used as the superconducting quantum bits.

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Atomic layer deposition of aluminum (111) thin film by dimethylethylaminealane precursor

Abstract

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