Atomic layer deposition of Pb(Zr,Ti)Ox thin films by a combination of binary atomic layer deposition processes

Takayuki Watanabe, Susanne Hoffmann-Eifert, Rainer Waser, Cheol Seong Hwang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

After an evaluation of Zr precursor, quaternary Pb(Zr,Ti)Ox [PZT] films were prepared by a combination of binary atomic layer deposition (ALD) processes. ZrOx films were deposited on Pt/TiO x/SiOx/Si substrates using liquid injection ALD. Zr(C 11H19O2)4 [Zr(DPM)4] dissolved in ethylcyclohexane (ECH) with a concentration of 0.1 M and water were used as precursor and oxidant, respectively. According to the Arrhenius plot for the deposition rate of ZrOx films at various deposition temperatures, the Zr precursor appeared to start marked thermal decomposition at a deposition temperature of 360°C. Below this thermal decomposition temperature, a saturated deposition rate of ZrOx films against input of Zr precursor was confirmed. The saturated deposition rate was about 5-6×10-12 mol/cm2·cycle at a deposition temperature of 300°C. Subsequently, binary ALD processes of TiOx and PbO films, whose self-regulated growth mode has been already confirmed, were combined with the ZrOx process into multi-precursor ALD of PZT films. Ti(OC3H7)2(C11H 19O2)2 [Ti(Oi-Pr)2(DPM)2] and Pb(C11H19O2)2 [Pb(DPM) 2] dissolved in ECH with a concentration of 0.1 M were used for PZT film preparation as well as Zr(DPM)4. Unit sequences described as 1×(Pb-O) - 2×(Ti-O) - n×(Zr-O) were repeated to deposit PZT films at 240°C. In the PZT process, the deposition rates of all cations were higher than those in their binary processes. The Pb/(Zr+Ti) and Zr/(Zr+Ti) ratio was adjusted by repeating the number of Zr-O cycles in a sequence. As-deposited PZT films were amorphous. Crystalline PZT films were obtained after annealing at 650°C, and the PZT crystal showed a preferred (100)/(001) orientation.

Original languageEnglish
Title of host publication2006 15th IEEE International Symposium on Applications of Ferroelectrics, ISAF
DOIs
Publication statusPublished - Dec 1 2006
Externally publishedYes
Event2006 15th IEEE International Symposium on Applications of Ferroelectrics, ISAF - Sunset Beach, NC, United States
Duration: Jul 30 2006Aug 3 2006

Publication series

NameIEEE International Symposium on Applications of Ferroelectrics

Other

Other2006 15th IEEE International Symposium on Applications of Ferroelectrics, ISAF
CountryUnited States
CitySunset Beach, NC
Period7/30/068/3/06

Fingerprint

Atomic layer deposition
Thin films
Deposition rates
Pyrolysis
Film preparation
Arrhenius plots
Temperature
Amorphous films
Oxidants
Crystal orientation
Cations
Deposits
Positive ions
Annealing
Crystalline materials
Crystals
Water
Liquids
Substrates

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Watanabe, T., Hoffmann-Eifert, S., Waser, R., & Hwang, C. S. (2006). Atomic layer deposition of Pb(Zr,Ti)Ox thin films by a combination of binary atomic layer deposition processes. In 2006 15th IEEE International Symposium on Applications of Ferroelectrics, ISAF [4349293] (IEEE International Symposium on Applications of Ferroelectrics). https://doi.org/10.1109/ISAF.2006.4349293

Atomic layer deposition of Pb(Zr,Ti)Ox thin films by a combination of binary atomic layer deposition processes. / Watanabe, Takayuki; Hoffmann-Eifert, Susanne; Waser, Rainer; Hwang, Cheol Seong.

2006 15th IEEE International Symposium on Applications of Ferroelectrics, ISAF. 2006. 4349293 (IEEE International Symposium on Applications of Ferroelectrics).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Watanabe, T, Hoffmann-Eifert, S, Waser, R & Hwang, CS 2006, Atomic layer deposition of Pb(Zr,Ti)Ox thin films by a combination of binary atomic layer deposition processes. in 2006 15th IEEE International Symposium on Applications of Ferroelectrics, ISAF., 4349293, IEEE International Symposium on Applications of Ferroelectrics, 2006 15th IEEE International Symposium on Applications of Ferroelectrics, ISAF, Sunset Beach, NC, United States, 7/30/06. https://doi.org/10.1109/ISAF.2006.4349293
Watanabe T, Hoffmann-Eifert S, Waser R, Hwang CS. Atomic layer deposition of Pb(Zr,Ti)Ox thin films by a combination of binary atomic layer deposition processes. In 2006 15th IEEE International Symposium on Applications of Ferroelectrics, ISAF. 2006. 4349293. (IEEE International Symposium on Applications of Ferroelectrics). https://doi.org/10.1109/ISAF.2006.4349293
Watanabe, Takayuki ; Hoffmann-Eifert, Susanne ; Waser, Rainer ; Hwang, Cheol Seong. / Atomic layer deposition of Pb(Zr,Ti)Ox thin films by a combination of binary atomic layer deposition processes. 2006 15th IEEE International Symposium on Applications of Ferroelectrics, ISAF. 2006. (IEEE International Symposium on Applications of Ferroelectrics).
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abstract = "After an evaluation of Zr precursor, quaternary Pb(Zr,Ti)Ox [PZT] films were prepared by a combination of binary atomic layer deposition (ALD) processes. ZrOx films were deposited on Pt/TiO x/SiOx/Si substrates using liquid injection ALD. Zr(C 11H19O2)4 [Zr(DPM)4] dissolved in ethylcyclohexane (ECH) with a concentration of 0.1 M and water were used as precursor and oxidant, respectively. According to the Arrhenius plot for the deposition rate of ZrOx films at various deposition temperatures, the Zr precursor appeared to start marked thermal decomposition at a deposition temperature of 360°C. Below this thermal decomposition temperature, a saturated deposition rate of ZrOx films against input of Zr precursor was confirmed. The saturated deposition rate was about 5-6×10-12 mol/cm2·cycle at a deposition temperature of 300°C. Subsequently, binary ALD processes of TiOx and PbO films, whose self-regulated growth mode has been already confirmed, were combined with the ZrOx process into multi-precursor ALD of PZT films. Ti(OC3H7)2(C11H 19O2)2 [Ti(Oi-Pr)2(DPM)2] and Pb(C11H19O2)2 [Pb(DPM) 2] dissolved in ECH with a concentration of 0.1 M were used for PZT film preparation as well as Zr(DPM)4. Unit sequences described as 1×(Pb-O) - 2×(Ti-O) - n×(Zr-O) were repeated to deposit PZT films at 240°C. In the PZT process, the deposition rates of all cations were higher than those in their binary processes. The Pb/(Zr+Ti) and Zr/(Zr+Ti) ratio was adjusted by repeating the number of Zr-O cycles in a sequence. As-deposited PZT films were amorphous. Crystalline PZT films were obtained after annealing at 650°C, and the PZT crystal showed a preferred (100)/(001) orientation.",
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