After an evaluation of Zr precursor, quaternary Pb(Zr,Ti)Ox [PZT] films were prepared by a combination of binary atomic layer deposition (ALD) processes. ZrOx films were deposited on Pt/TiO x/SiOx/Si substrates using liquid injection ALD. Zr(C 11H19O2)4 [Zr(DPM)4] dissolved in ethylcyclohexane (ECH) with a concentration of 0.1 M and water were used as precursor and oxidant, respectively. According to the Arrhenius plot for the deposition rate of ZrOx films at various deposition temperatures, the Zr precursor appeared to start marked thermal decomposition at a deposition temperature of 360°C. Below this thermal decomposition temperature, a saturated deposition rate of ZrOx films against input of Zr precursor was confirmed. The saturated deposition rate was about 5-6×10-12 mol/cm2·cycle at a deposition temperature of 300°C. Subsequently, binary ALD processes of TiOx and PbO films, whose self-regulated growth mode has been already confirmed, were combined with the ZrOx process into multi-precursor ALD of PZT films. Ti(OC3H7)2(C11H 19O2)2 [Ti(Oi-Pr)2(DPM)2] and Pb(C11H19O2)2 [Pb(DPM) 2] dissolved in ECH with a concentration of 0.1 M were used for PZT film preparation as well as Zr(DPM)4. Unit sequences described as 1×(Pb-O) - 2×(Ti-O) - n×(Zr-O) were repeated to deposit PZT films at 240°C. In the PZT process, the deposition rates of all cations were higher than those in their binary processes. The Pb/(Zr+Ti) and Zr/(Zr+Ti) ratio was adjusted by repeating the number of Zr-O cycles in a sequence. As-deposited PZT films were amorphous. Crystalline PZT films were obtained after annealing at 650°C, and the PZT crystal showed a preferred (100)/(001) orientation.