Atomic-scale planarization of Ge (111), (110) and (100) surfaces

Tomonori Nishimura, Choong Hyun Lee, Takeaki Yajima, Kosuke Nagashio, Akira Toriumi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The Ge surfaces are planarized in H2 annealing with atomically flat manner on (110) and (100) surfaces in addition to that on (111) surface. The terrace widths on (111) and (110) are almost controlled by the off-angle of the initial surface. The low thermal budget of 500°C in H2 to form the atomically flat surface is advantageous for the device fabrication on Ge (111) and (110) surfaces, because these surface orientations fortunately are expected to facilitate the high electron and hole mobility for n- and p-FETs, respectively.

Original languageEnglish
Title of host publication2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014
PublisherIEEE Computer Society
Pages127-128
Number of pages2
ISBN (Print)9781479954285
DOIs
Publication statusPublished - 2014
Externally publishedYes
Event7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014 - Singapore, Singapore
Duration: Jun 2 2014Jun 4 2014

Publication series

Name2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014

Other

Other7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014
Country/TerritorySingapore
CitySingapore
Period6/2/146/4/14

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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