Abstract
The atomic structure of AIN (0001)/Al2O3 (0001) Interface, which is a model of a large lattice-mismatched film/substrate interface, was investigated by using static lattice calculations. Detailed analysis of the calculated structure revealed that the atomic relaxation behavior strongly depends on local atomic configurations of the interface. Interface distance became larger when Al atoms of AIN side and O atoms of Al2O3 side at the interface are in on-top configurations, while it became smaller when they are not in on-top configurations. The calculated structure qualitatively reproduced the experimental high-resolution transmission electron microscopy (HRTEM) image, which was obtained in our previous study. Such varieties of the atomic relaxation can be concluded to play one of the important roles for the formation of stable hetero-interface structures.
| Original language | English |
|---|---|
| Pages (from-to) | 1018-1021 |
| Number of pages | 4 |
| Journal | Journal of the Ceramic Society of Japan |
| Volume | 114 |
| Issue number | 1335 |
| DOIs | |
| Publication status | Published - Nov 2006 |
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All Science Journal Classification (ASJC) codes
- Ceramics and Composites
- Chemistry(all)
- Condensed Matter Physics
- Materials Chemistry
Cite this
Atomic structure and relaxation behavior at AlN (0001 )/Al 2O3 (0001) interface. / Tokumoto, Yuki; Mizoguchi, Teruyasu; Sato, Yukio; Shibata, Naoya; Yamamoto, Takahisa; Ikuhara, Yuichi.
In: Journal of the Ceramic Society of Japan, Vol. 114, No. 1335, 11.2006, p. 1018-1021.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Atomic structure and relaxation behavior at AlN (0001 )/Al 2O3 (0001) interface
AU - Tokumoto, Yuki
AU - Mizoguchi, Teruyasu
AU - Sato, Yukio
AU - Shibata, Naoya
AU - Yamamoto, Takahisa
AU - Ikuhara, Yuichi
PY - 2006/11
Y1 - 2006/11
N2 - The atomic structure of AIN (0001)/Al2O3 (0001) Interface, which is a model of a large lattice-mismatched film/substrate interface, was investigated by using static lattice calculations. Detailed analysis of the calculated structure revealed that the atomic relaxation behavior strongly depends on local atomic configurations of the interface. Interface distance became larger when Al atoms of AIN side and O atoms of Al2O3 side at the interface are in on-top configurations, while it became smaller when they are not in on-top configurations. The calculated structure qualitatively reproduced the experimental high-resolution transmission electron microscopy (HRTEM) image, which was obtained in our previous study. Such varieties of the atomic relaxation can be concluded to play one of the important roles for the formation of stable hetero-interface structures.
AB - The atomic structure of AIN (0001)/Al2O3 (0001) Interface, which is a model of a large lattice-mismatched film/substrate interface, was investigated by using static lattice calculations. Detailed analysis of the calculated structure revealed that the atomic relaxation behavior strongly depends on local atomic configurations of the interface. Interface distance became larger when Al atoms of AIN side and O atoms of Al2O3 side at the interface are in on-top configurations, while it became smaller when they are not in on-top configurations. The calculated structure qualitatively reproduced the experimental high-resolution transmission electron microscopy (HRTEM) image, which was obtained in our previous study. Such varieties of the atomic relaxation can be concluded to play one of the important roles for the formation of stable hetero-interface structures.
UR - http://www.scopus.com/inward/record.url?scp=33750727378&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=33750727378&partnerID=8YFLogxK
U2 - 10.2109/jcersj.114.1018
DO - 10.2109/jcersj.114.1018
M3 - Article
AN - SCOPUS:33750727378
VL - 114
SP - 1018
EP - 1021
JO - Nippon Seramikkusu Kyokai Gakujutsu Ronbunshi/Journal of the Ceramic Society of Japan
JF - Nippon Seramikkusu Kyokai Gakujutsu Ronbunshi/Journal of the Ceramic Society of Japan
SN - 1882-0743
IS - 1335
ER -