Atomic structure and relaxation behavior at AlN (0001 )/Al 2O3 (0001) interface

Yuki Tokumoto; Teruyasu Mizoguchi; Yukio Sato; Naoya Shibata; Takahisa Yamamoto; Yuichi Ikuhara

doi:10.2109/jcersj.114.1018

Atomic structure and relaxation behavior at AlN (0001 )/Al ₂O₃ (0001) interface

Yuki Tokumoto, Teruyasu Mizoguchi, Yukio Sato, Naoya Shibata, Takahisa Yamamoto, Yuichi Ikuhara

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

The atomic structure of AIN (0001)/Al₂O₃ (0001) Interface, which is a model of a large lattice-mismatched film/substrate interface, was investigated by using static lattice calculations. Detailed analysis of the calculated structure revealed that the atomic relaxation behavior strongly depends on local atomic configurations of the interface. Interface distance became larger when Al atoms of AIN side and O atoms of Al₂O₃ side at the interface are in on-top configurations, while it became smaller when they are not in on-top configurations. The calculated structure qualitatively reproduced the experimental high-resolution transmission electron microscopy (HRTEM) image, which was obtained in our previous study. Such varieties of the atomic relaxation can be concluded to play one of the important roles for the formation of stable hetero-interface structures.

Original language	English
Pages (from-to)	1018-1021
Number of pages	4
Journal	Journal of the Ceramic Society of Japan
Volume	114
Issue number	1335
DOIs	https://doi.org/10.2109/jcersj.114.1018
Publication status	Published - Nov 2006
Externally published	Yes

All Science Journal Classification (ASJC) codes

Ceramics and Composites
Chemistry(all)
Condensed Matter Physics
Materials Chemistry

Access to Document

10.2109/jcersj.114.1018

Fingerprint Dive into the research topics of 'Atomic structure and relaxation behavior at AlN (0001 )/Al <sub>2</sub>O<sub>3</sub> (0001) interface'. Together they form a unique fingerprint.

Cite this

@article{a9e8bfae5be74969898ad50ad039b10c,

title = "Atomic structure and relaxation behavior at AlN (0001 )/Al 2O3 (0001) interface",

abstract = "The atomic structure of AIN (0001)/Al2O3 (0001) Interface, which is a model of a large lattice-mismatched film/substrate interface, was investigated by using static lattice calculations. Detailed analysis of the calculated structure revealed that the atomic relaxation behavior strongly depends on local atomic configurations of the interface. Interface distance became larger when Al atoms of AIN side and O atoms of Al2O3 side at the interface are in on-top configurations, while it became smaller when they are not in on-top configurations. The calculated structure qualitatively reproduced the experimental high-resolution transmission electron microscopy (HRTEM) image, which was obtained in our previous study. Such varieties of the atomic relaxation can be concluded to play one of the important roles for the formation of stable hetero-interface structures.",

author = "Yuki Tokumoto and Teruyasu Mizoguchi and Yukio Sato and Naoya Shibata and Takahisa Yamamoto and Yuichi Ikuhara",

year = "2006",

month = nov,

doi = "10.2109/jcersj.114.1018",

language = "English",

volume = "114",

pages = "1018--1021",

journal = "Nippon Seramikkusu Kyokai Gakujutsu Ronbunshi/Journal of the Ceramic Society of Japan",

issn = "1882-0743",

publisher = "Ceramic Society of Japan/Nippon Seramikkusu Kyokai",

number = "1335",

}

TY - JOUR

T1 - Atomic structure and relaxation behavior at AlN (0001 )/Al 2O3 (0001) interface

AU - Tokumoto, Yuki

AU - Mizoguchi, Teruyasu

AU - Sato, Yukio

AU - Shibata, Naoya

AU - Yamamoto, Takahisa

AU - Ikuhara, Yuichi

PY - 2006/11

Y1 - 2006/11

N2 - The atomic structure of AIN (0001)/Al2O3 (0001) Interface, which is a model of a large lattice-mismatched film/substrate interface, was investigated by using static lattice calculations. Detailed analysis of the calculated structure revealed that the atomic relaxation behavior strongly depends on local atomic configurations of the interface. Interface distance became larger when Al atoms of AIN side and O atoms of Al2O3 side at the interface are in on-top configurations, while it became smaller when they are not in on-top configurations. The calculated structure qualitatively reproduced the experimental high-resolution transmission electron microscopy (HRTEM) image, which was obtained in our previous study. Such varieties of the atomic relaxation can be concluded to play one of the important roles for the formation of stable hetero-interface structures.

AB - The atomic structure of AIN (0001)/Al2O3 (0001) Interface, which is a model of a large lattice-mismatched film/substrate interface, was investigated by using static lattice calculations. Detailed analysis of the calculated structure revealed that the atomic relaxation behavior strongly depends on local atomic configurations of the interface. Interface distance became larger when Al atoms of AIN side and O atoms of Al2O3 side at the interface are in on-top configurations, while it became smaller when they are not in on-top configurations. The calculated structure qualitatively reproduced the experimental high-resolution transmission electron microscopy (HRTEM) image, which was obtained in our previous study. Such varieties of the atomic relaxation can be concluded to play one of the important roles for the formation of stable hetero-interface structures.

UR - http://www.scopus.com/inward/record.url?scp=33750727378&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33750727378&partnerID=8YFLogxK

U2 - 10.2109/jcersj.114.1018

DO - 10.2109/jcersj.114.1018

M3 - Article

AN - SCOPUS:33750727378

VL - 114

SP - 1018

EP - 1021

JO - Nippon Seramikkusu Kyokai Gakujutsu Ronbunshi/Journal of the Ceramic Society of Japan

JF - Nippon Seramikkusu Kyokai Gakujutsu Ronbunshi/Journal of the Ceramic Society of Japan

SN - 1882-0743

IS - 1335