TY - JOUR
T1 - Atomic structure of AlN/Al2O3 interfaces fabricated by pulsed-laser deposition
AU - Tokumoto, Y.
AU - Sato, Y.
AU - Yamamoto, T.
AU - Shibata, N.
AU - Ikuhara, Y.
N1 - Funding Information:
This study was financially supported by a Grant-in-Aid for Scientific Research and Special Coordination Funds from the Ministry of Education, Culture, Sports, Science and Technology, and Japan Society of Promotion of Science, (JSPS) Japan. One of the authors (YS) is supported as a JSPS research fellow.
PY - 2006/5
Y1 - 2006/5
N2 - The atomic structure of AlN/Al2O3 interface fabricated by pulsed laser deposition is characterized by high-resolution transmission electron microscopy (HRTEM) combined with systematic multi-slice HRTEM image simulations. It is found that the AlN film deposited on a (0001) Al2O3 substrate grows epitaxially with the orientation relationship of (0001)AlN//(0001) Al2O3 and [1100 ]AlN//[11 20 ]Al2O3, with an atomically sharp interface. The observed interface showed best correspondence with the rigid structural model that AlN is terminated by Al at the interface, while the Al 2O3 substrate is terminated by O. Detailed structural analysis indicates that Al sites at the interface are coordinated by both oxygen and nitrogen in this model, with similar coordination environment in AlN. This favored coordination state at the interface may stabilize the AlN/Al 2O3 interface.
AB - The atomic structure of AlN/Al2O3 interface fabricated by pulsed laser deposition is characterized by high-resolution transmission electron microscopy (HRTEM) combined with systematic multi-slice HRTEM image simulations. It is found that the AlN film deposited on a (0001) Al2O3 substrate grows epitaxially with the orientation relationship of (0001)AlN//(0001) Al2O3 and [1100 ]AlN//[11 20 ]Al2O3, with an atomically sharp interface. The observed interface showed best correspondence with the rigid structural model that AlN is terminated by Al at the interface, while the Al 2O3 substrate is terminated by O. Detailed structural analysis indicates that Al sites at the interface are coordinated by both oxygen and nitrogen in this model, with similar coordination environment in AlN. This favored coordination state at the interface may stabilize the AlN/Al 2O3 interface.
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U2 - 10.1007/s10853-006-7767-1
DO - 10.1007/s10853-006-7767-1
M3 - Article
AN - SCOPUS:33744745982
SN - 0022-2461
VL - 41
SP - 2553
EP - 2557
JO - Journal of Materials Science
JF - Journal of Materials Science
IS - 9
ER -